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THE LOW FREQUENCY EFFECTS OF TRANSVERSE CONDUCTIVITY OF ELECTRON IN LOCALIZED STATE OF THE TWO DIMENSIONAL ELECTRON GAS IN MOS INVERSION LAYER UNDER THE CONDITION OF QUANTIZED LIMIT

Zhao Leng-zhu

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THE LOW FREQUENCY EFFECTS OF TRANSVERSE CONDUCTIVITY OF ELECTRON IN LOCALIZED STATE OF THE TWO DIMENSIONAL ELECTRON GAS IN MOS INVERSION LAYER UNDER THE CONDITION OF QUANTIZED LIMIT

Zhao Leng-zhu
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  • In this article, we analyze the frequency characteristics of electron conductivity in localized states of the 2 dimensional electron gas (2DEG) in MOS inversion layer under the condition of quantized limit. Based on the frequency dependence of Fermi distribution function, we derived the frequency characteristics of the two dominant conduction processes, i.e., the conductivity due to the process of thermally exciting to the mobility edge, σME (ω),and that due to variable range hopping process, σVRH(ω). We found that σME(ω) and σVRH (ω) are both complex functions. The time constant of σME(ω), τn, is longer, corresponding to a low frequency process. And that of σVRH(ω) is much shorter, corresponding to high frequency process. The theoretical curve is compared with experimental data. It is found that in order to fit the theoretical curve to the experimental one, the time constant τn should be approximately 3.6 ×10-6 s.
  • [1] Deng Shan-shan, Song Ping, Liu Xiao-he, Yao Sen, Zhao Qian-yi. The magnetic susceptibility of Mn3Sn single crystal is enhanced under GPa-level uniaxial stress. Acta Physica Sinica, 2024, 0(0): . doi: 10.7498/aps.73.20240287
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Publishing process
  • Received Date:  10 July 1985
  • Published Online:  05 February 1987

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