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In this paper, CH3CSNH2 passivated GaAs(100) surfaces in different conditions such as in alkali and acid solution were investigated by SRPES and PL. SRPES reveals that sulfur bonds both Ga and As on GaAs surfaces. Improvements of PL intensities reveal the reduction of surface combination velocity, resulting in the reduction of surface defect states due to the formation of sulfur passivation films.
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