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Online degradation model based on process-stress accelerated test

Guo Chun-Sheng Wan Ning Ma Wei-Dong Xiong Cong Zhang Guang-Chen Feng Shi-Wei

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Online degradation model based on process-stress accelerated test

Guo Chun-Sheng, Wan Ning, Ma Wei-Dong, Xiong Cong, Zhang Guang-Chen, Feng Shi-Wei
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  • An online degradation model is presented, in which is avoided the error in parameter degradation accelerated test, which is caused by temperature shock during parameter measurement. Through the measurement with avoiding the error parameter, the parameter degradation model can be more accurate. To demonstrate the application of the method, a kind of mature product, 3CG120, is tested in a temperature range of 150230 ℃ under online process-stress. Then the error of lifetime is obtained by utilizing the online model to be about 6.5%, much less than that of the old model (23.2%).
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    Meneghini M, Trevisanello L R, Zehnder U 2007 IEEE Trans. Electron Dev. 54 3245

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    Pasco R W, Schwarz J A 1983 Solid-State Electron. 26 445

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    Li Z G, Song Z C, Sun D P 2003 Chin. J. Semicond. 24 856 (in Chinese)[李志国、宋增超、孙大鹏 2003 半导体学报 24 856]

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    Luan S Z, Liu H X, Jia R X 2008 Acta Phys. Sin. 57 2524 (in Chinese) [栾苏珍、刘红侠、贾仁需 2008 物理学报 57 2524]

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    Guo C S, Shan N N, Feng S W, Ma W D 2010 Acta Phys. Sin. 59 2350 (in Chinese) [郭春生、单尼娜、冯士维、马卫东 2010 物理学报 59 2350]

    [17]
  • [1]

    Grillot P N, Krames M R, Zhao H, Teoh S H 2006 IEEE Trans. Dev. Mater. Rel. 6 564

    [2]

    Huang J S 2005 IEEE Trans. Dev. Mater. Rel. 5 150

    [3]
    [4]

    Meneghini M, Trevisanello L R, Zehnder U 2007 IEEE Trans. Electron Dev. 54 3245

    [5]
    [6]
    [7]

    Zhao J Y, Liu F, Sun Q, Zhou J L 2005 Acta Electron. Sin. 33 378 (in Chinese)[赵建印、刘 芳、孙 权、周经伦 2005 电子学报 33 378]

    [8]
    [9]

    Huang J S 2006 IEEE Trans. Dev. Mater. Rel. 6 46

    [10]
    [11]

    Pasco R W, Schwarz J A 1983 Solid-State Electron. 26 445

    [12]

    Li Z G, Song Z C, Sun D P 2003 Chin. J. Semicond. 24 856 (in Chinese)[李志国、宋增超、孙大鹏 2003 半导体学报 24 856]

    [13]
    [14]

    Luan S Z, Liu H X, Jia R X 2008 Acta Phys. Sin. 57 2524 (in Chinese) [栾苏珍、刘红侠、贾仁需 2008 物理学报 57 2524]

    [15]
    [16]

    Guo C S, Shan N N, Feng S W, Ma W D 2010 Acta Phys. Sin. 59 2350 (in Chinese) [郭春生、单尼娜、冯士维、马卫东 2010 物理学报 59 2350]

    [17]
  • [1] Deng Shan-shan, Song Ping, Liu Xiao-he, Yao Sen, Zhao Qian-yi. The magnetic susceptibility of Mn3Sn single crystal is enhanced under GPa-level uniaxial stress. Acta Physica Sinica, 2024, 0(0): . doi: 10.7498/aps.73.20240287
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Publishing process
  • Received Date:  07 February 2011
  • Accepted Date:  14 June 2011
  • Published Online:  05 June 2011

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