Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Yu Chen-Hui; Luo Xiang-Dong; Zhou Wen-Zheng; Luo Qing-Zhou; Liu Pei-Sheng

doi:10.7498/aps.61.207301

Abstract

A series of AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility-transistors (DH-HEMT) is fabricated with GaN channel layer thicknesses from 6 nm to 20 nm by two-dimensional (2D) numerical simulations. A new idea for optimizating of DH-HEMT structure is proposed. The hot electron effect and self-heating effect are investigated by using hydrodynamic model. Current collapse and negative differential conductance are observed to be directly relevant to GaN channel layer thickness. DH-HEMT with thicker GaN channel layer can confine electrons better in channel, which significantly diminishes the penetration ability of hot electrons from channel layer to buffer layer under high voltage. Increasing the thickness of GaN channel layer appropriately can effectively restrict current collapse and negative differential conductance, and consequently improve device performance under high voltage condition.

Keywords:

double-heterojunction high-electron-mobility-transistors /
current collapse /
hot electron effect /
self-heating effect

Authors and contacts

1.
Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;
2.
College of Physics Science and Technology, Guangxi University, Nanning 530004, China;
3.
School of Remote Sensing, Nanjing University of Information Science and Technology, Nanjing 210044, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11104150, 60906045) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2010571).

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[17]	Tang J, Wang X L, Chen T S, Xiao H L, Ran J X, Zhang M L, Hu G X, Feng C, Hou Q, Wei M, Li J M, Wang Z G 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, 20-23 Oct. 2008 p1114
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[20]	Wang L, Hu W D, Chen X S, Lu W 2010 Acta Phys. Sin. 59 5730 (in Chinese) [王林, 胡伟达, 陈效双, 陆卫 2010 物理学报 59 5730]
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[22]	Liu J, Zhou Y, Zhu J, Cai Y, Lau K M, Chen K J 2007 IEEE T. Electron. Dev. 54 2
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[25]	Wang L, Hu W D, Chen X S, Lu W 2012 J. Electron. Mater. 41 2130
[26]	Barry E A, Kim K W, Kochelap V A 2002 Appl. Phys. Lett. 80 2317
[27]	Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE T. Electron. Dev. 59 1393

Cited By

[1]	Mishra U K, Parikh P, Wu Y F 2002 Proc. IEEE 90 1022
[2]	Liberis J, Matulionienė I, Matulionis A, Šermukšnis E, Xie J, Leach J H, Morkoc H 2009 Phys. Stat. Sol. A 206 1385
[3]	Liu J, Zhou Y, Zhu J, Lau K M, Chen K J 2006 IEEE Electr. Dev. Lett. 27 10
[4]	Medjdoub F, Derluyn J, Cheng K, Leys M, Degroote S, Marcon D, Visalli D, van Hove M, Germain M, Borghs G 2010 IEEE Electr. Dev. Lett. 31 111
[5]	Brown D F, Shinohara K, Williams A, Milosavljevic I, Grabar R, Hashimoto P, Willadsen P J, Schmitz A, Corrion A L, Kim S, Regan D, Butler C M, Burnham S D, Micovic M 2011 IEEE T. Electron. Dev. 58 1063
[6]	Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[7]	Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[8]	Faqir M, Bouya M, Malbert N, Labat N, Carisetti D, Lambert B, Verzellesi G, Fantini F 2010 Microelectron. Reliab. 50 1520
[9]	Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[10]	Binari S C, Ikossi K, Roussos J A, Kruppa W, Doewon P, Dietrich H B, Koleske D D, Wickenden A E, Henry R L 2001 IEEE T. Electron. Dev. 48 465
[11]	Binari S C, Klein P B, Kazior T E 2002 Proc. IEEE 90 1048
[12]	Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE T. Electron. Dev. 48 560
[13]	Hu X, Koudymov A, Simin G, Yang J, Khan M A, Tarakji A, Shur M S, Gaska R 2001 Appl. Phys. Lett. 79 2832
[14]	Kuzmik J, Javorka R, Alam A, Marso M, Heuken M, Kordos P 2002 IEEE T. Electron. Dev. 49 1496
[15]	Wu X H, Brown L M, Kapolnek D, Keller S, Keller B, DenBaars S P, Speck J S 1996 J. Appl. Phys. 80 3228
[16]	Klein P B, Binari S C, Ikossi K, Wickenden A E, Koleske D D, Henry R L 2001 Appl. Phys. Lett. 79 3527
[17]	Tang J, Wang X L, Chen T S, Xiao H L, Ran J X, Zhang M L, Hu G X, Feng C, Hou Q, Wei M, Li J M, Wang Z G 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Beijing, China, 20-23 Oct. 2008 p1114
[18]	Zhang S, Li M C, Feng Z H, Liu B, Yin J Y, Zhao L C 2009 Appl. Phys. Lett. 95 212101
[19]	Faraclas E W, Anwar A F M 2006 Solid State Electron. 50 1051
[20]	Wang L, Hu W D, Chen X S, Lu W 2010 Acta Phys. Sin. 59 5730 (in Chinese) [王林, 胡伟达, 陈效双, 陆卫 2010 物理学报 59 5730]
[21]	Wang L, Hu W D, Chen X S, Lu W 2010 J. Appl. Phys. 108 054501
[22]	Liu J, Zhou Y, Zhu J, Cai Y, Lau K M, Chen K J 2007 IEEE T. Electron. Dev. 54 2
[23]	Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J 1999 J. Appl. Phys. 85 3222
[24]	Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Khan M A, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[25]	Wang L, Hu W D, Chen X S, Lu W 2012 J. Electron. Mater. 41 2130
[26]	Barry E A, Kim K W, Kochelap V A 2002 Appl. Phys. Lett. 80 2317
[27]	Wang X D, Hu W D, Chen X S, Lu W 2012 IEEE T. Electron. Dev. 59 1393

Catalog

Vol. 61, Issue 20 - 2012-10-20

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