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Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

Ma Ming-Lei Wu Jian Yang Mu Ning Yong-Qiang Shang Guang-Yi

Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

Ma Ming-Lei, Wu Jian, Yang Mu, Ning Yong-Qiang, Shang Guang-Yi
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  • Received Date:  16 March 2013
  • Accepted Date:  21 April 2013
  • Published Online:  05 September 2013

Experimental characterization of polarization gain properties of 808nm semiconductor laser and analysis of energy band based on amplified spontaneous emissions from double facets

  • 1. Department of Applied Physics, Beihang University, Beijing 100191, China;
  • 2. State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 10974012).

Abstract: The information of optical gain of semiconductor lasers can be obtained through the amplified spontaneous emission from double facets. By utilizing this new approach, an experimental research about polarization (TE and TM) gain characteristics of continuously-operated 808 nm GaAs/AlGaAs quantum well laser is introduced in this paper. Through the measured gain spectra which are compared with the theoretical gain curves, we analyze the variations of hole subband corresponding to the polarizations along with the change of injection current, meanwhile the actual status of gain spectra and influential factors of the continuously-operated laser are discussed as well.

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