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Microchannel heat sinks have important applications in integrated circuits, but the current traditional long straight microchannel heat dissipation process causes uneven temperature and low heat dissipation efficiency. In this paper, a periodic split-flow microstructure is designed and integrated with traditional microchannels to form a periodic split-flow microchannel heat sink. Numerical simulation is used to study the influence of the number, the arrangement and structural parameters of microstructures in a single microchannel on its thermal performance. The simulation results show that the split-flow microstructure can increase the heat exchange area, break the original laminar boundary layer, promote the mixing of cold/hot coolant, and significantly improve the heat dissipation performance of the microchannel. Through comparative experiments, 9 groups are finally determined as the optimal number of microstructures in a single microchannel. At a heat flux of 100 W/cm2, when the coolant flow rate at the inlet is 1.18 m/s, after 9 groups of microstructures are added into a single microchannel, the maximum temperature drops by about 24 K and the thermal resistance decreases by about 44%. The Nusselt number is increased by about 124%, and the performance evaluation criterion (PEC) reaches 1.465. On this basis, the microstructure adopts a staggered gradual periodic arrangement to avoid the long-distance non-microstructure section between the two groups of microstructures. The turbulence element that gradually widens along the flow direction makes the coolant fully utilized. This results in a reduction in the high/low temperature zone and alleviates the temperature gradient that exists along the flow direction of the heat dissipation surface, and the pressure drop loss is also reduced to a certain extent compared with the pressure drop in the uniform arrangement, and the comprehensive thermal performance is further improved. It shows broad application prospects in the field of high-power integrated circuits and electronic cooling.
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Keywords:
- microchannel /
- heat dissipation structure /
- periodic split-flow
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[9] Tuckerman D B, Pease R F W 1981 IEEE Electron Device Lett. 2 126
Google Scholar
[10] 裘腾威, 刘敏, 刘源, 张祎, 金涨军 2020 低温与超导 48 85
Qiu T W, Liu M, Liu Y, Zhang W, Jin Z J J 2020 Cryog. Supercond. 48 85
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Qiu T W, Liu M, Liu Y, Zhang W, Zhang W 2020 J. Therm. Sci. Tech. 19 339
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Google Scholar
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Google Scholar
[14] Bahiraei M, Monavari A, Naseri M, Moayedi H 2020 Int. J. Heat Mass Transfer 151 119359
Google Scholar
[15] Rubio-Jimenez C A, Hernandez-Guerrero A, Cervantes J G, Lorenzini-Gutierrez D, Gonzalez-Valle C U 2016 Appl. Therm. Eng. 95 374
Google Scholar
[16] 俞炜, 邓梓龙, 吴苏晨, 于程, 王超 2019 物理学报 68 054701
Google Scholar
Yu W, Deng Z L, Wu S C, Yu C, Wang C 2019 Acta. Phys. Sin. 68 054701
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Dong T, Chen Y S, Yang C C, Bi Q C, Wu H L, Zheng G P 2005 J. Chem. Eng. Data. 56 1618
Google Scholar
[19] Abo-Zahhad E M, Ookawara S, Radwan A, Elkady M F, El-Shazly A H 2020 Case Stud. Therm. Eng. 18 100587
Google Scholar
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Google Scholar
[21] Bhandari P, Prajapati Y K 2021 Int. J. Therm. Sci. 159 106609
Google Scholar
[22] Zhang M K, Chen S, Shang Z 2012 Acta. Phys. Sin. 61 247
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[24] Wang R J, Wang J W, Lijin B Q, Zhu Z F 2018 Appl. Therm. Eng. 133 428
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Google Scholar
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图 1 长直微通道散热器结构示意图 (a)长直微通道散热器; (b)单根微通道截面
Figure 1. Schematic diagram of the long straight microchannel heat sink: (a) Long straight microchannel heat sink; (b) cross section of a single microchannel
图 2 分流微通道结构示意图 (a)分流微通道散热器; (b)分流微结构局部俯视图
Figure 2. Schematic diagram of the split-flow microchannel structure: (a) Split-flow microchannel heat sink; (b) Partial top view of the split-flow microstructure
图 3 含有不同数量及排布方式微结构的单/双根微通道示意图: SM1 (0组); SM2 (3组); SM3 (9组); SM4 (15组); DM1 (交错排布); DM2 (渐密排布); DM3 (渐变排布); DM4(交错渐变排布)
Figure 3. Schematic diagram of single/double microchannels with different numbers and arrangements of microstructures: SM1 (0 group); SM2 (3 groups); SM3 (9 groups); SM4 (15 groups); DM1 (staggered arrangement); DM2 (gradually arranged); DM3 (gradient arrangement); DM4 (staggered gradient arrangement)
图 4 (a) SM1—SM4微通道内主流线方向流体的压力变化; (b) SM3及DM1—DM4在不同入口端流速下的压降损失
Figure 4. (a)Pressure change of the fluid in the direction of the main flow line in the SM1–SM4 microchannel; (b) the pressure drop loss of SM3 and DM1–DM4 at different inlet flow rates.
图 5 SM2中微结构附近局部流体的压力变化切面云图
Figure 5. Cross-sectional cloud diagram of pressure change of local fluid near the microstructure in SM2
图 6 整体热阻与泵送功率的关系 (a) SM1—SM4; (b) SM3, DM1—DM4
Figure 6. Relationship between overall thermal resistance and pumping power: (a) SM1–SM4; (b) SM3, DM1–DM4
图 7 流体在SM2微通道内不同位置的流速分布
Figure 7. Flow velocity distribution of fluid at different positions in the SM2 microchannel
图 8 不同位置流速切面图
Figure 8. Cross-sectional view of flow velocity at different locations
图 9 微通道底面最高温度与入口端流速的关系 (a) SM1—SM4; (b) SM3及DM1—DM4
Figure 9. Relationship between the maximum temperature on the bottom of the microchannel and the flow rate at the inlet: (a) SM1–SM4; (b) SM3 and DM1–DM4
图 10 不同情况下底面上沿主流动方向上温度变化 (a) SM1—SM4; (b) SM3及DM1—DM4
Figure 10. Temperature changes along the main flow direction on the bottom surface under different conditions: (a) SM1–SM4; (b) SM3 and DM1–DM4.
图 11 不同情况下换热面温度分布云图
Figure 11. Cloud diagram of temperature distribution of heat exchange surface under different conditions.
图 12 微通道散热器整体热阻与入口雷诺数的关系
Figure 12. The relationship between the overall thermal resistance of the microchannel radiator and the entrance Reynolds number.
图 13 (a)不同情况下努塞尔数与入口端雷诺数的关系; (b)不同情况PEC与入口雷诺数的关系
Figure 13. (a) The relationship between Nusselt number and inlet Reynolds number under different conditions; (b) the relationship between performance evaluation criterion and inlet Reynolds number under different conditions.
表 1 不同温度下水的物理参数
Table 1. Physical parameters of water at different temperatures
温度
T/K密度 ρ/
(kg·m–3)恒压热容 cp/
(J·kg–1·K–1)导热系数 κ/
(W·m–1·K–1)动态黏度 μ/
(10–4 Pa·s)293.15 998.2 4186.9 0.59423 10.093 303.15 995.62 4179.7 0.61055 7.96 313.15 992.2 4176.5 0.62516 6.51 323.15 988.05 4176.8 0.6381 5.47 333.15 983.22 4180.2 0.64942 4.70 343.15 977.78 4186.3 0.65916 4.10 353.15 971.78 4194.8 0.66738 3.59 363.15 965.3 4205.4 0.67413 3.17 373.15 958.39 4218.2 0.67944 2.82 383.15 958.39 4233 0.68337 2.53 
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表 2 硅的物理参数
Table 2. Physical parameters of silicon.
材料
物性密度ρ/
(kg·m–3)恒压热容 cp/
(J·kg–1·K–1)导热系数k/
(W·m–1·K–1)硅 2329 700 130
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表 3 网格独立性研究
Table 3. Grid independence research
网格1893083 网格21128905 网格31414841 网格41702482 网格51916125 网格63475672 压降损失($ \Delta P $) 4195.0 4287.0 4341.2 4379.9 4409.6 4406.1 最高温度(Tm) 353.05 352.65 352.32 351.94 351.88 351.87 误差 4.8%; 0.33% 2.7%; 0.22% 1.47%; 0.13% 0.59%; 0.020% 0.079%; 0.0028% 基准
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[1] 刘益才 2006 电子器件 29 296
Google Scholar
Liu Y C 2006 Chin. J. Electron. 29 296
Google Scholar
[2] Ono M, Hata M, Tsunekawa M, Nozaki K, Sumikura H, Chiba H, Notomi M 2020 Nat. Photonics 14 37
Google Scholar
[3] Murshed S M S, Castro C A N D 2017 Renewable Sustainable Energy Rev. 78 821
Google Scholar
[4] Zhang Z W, Ouyang Y, Cheng Y, Chen J, Li N B, Zhang G 2020 Phys. Rep. 860 1
Google Scholar
[5] Xu X F, Zhou J, Chen J 2020 Adv. Funct. Mater. 30 1904704
Google Scholar
[6] Ma Y L, Zhang Z W, Chen J G, Kimmo S, Sebastian V, Chen J 2018 Carbon 135 263
Google Scholar
[7] Dmitry A, Chen J, Walther J H, Giapis K P, Panagiotis A, Petros K 2015 Nano Lett. 15 5744
Google Scholar
[8] 刘一兵 2007 电子工艺技术 28 286
Google Scholar
Liu Y B 2007 Electron. Process Technol. 28 286
Google Scholar
[9] Tuckerman D B, Pease R F W 1981 IEEE Electron Device Lett. 2 126
Google Scholar
[10] 裘腾威, 刘敏, 刘源, 张祎, 金涨军 2020 低温与超导 48 85
Qiu T W, Liu M, Liu Y, Zhang W, Jin Z J J 2020 Cryog. Supercond. 48 85
[11] 裘腾威, 刘敏, 刘源, 张祎, 张威 2020 热科学与技术 19 339
Qiu T W, Liu M, Liu Y, Zhang W, Zhang W 2020 J. Therm. Sci. Tech. 19 339
[12] Qi Z, Zheng Y, Zhu X, Wei J, Liu J, Chen L, Li C 2020 Vacuum 177 109377
Google Scholar
[13] Khan M Z U, Uddin E, Akbar B, Akram N, Naqvi A A, Sajid M, Ali Z, Younis M Y, Garcia Marquez F P 2020 Nanomaterials 10 1796
Google Scholar
[14] Bahiraei M, Monavari A, Naseri M, Moayedi H 2020 Int. J. Heat Mass Transfer 151 119359
Google Scholar
[15] Rubio-Jimenez C A, Hernandez-Guerrero A, Cervantes J G, Lorenzini-Gutierrez D, Gonzalez-Valle C U 2016 Appl. Therm. Eng. 95 374
Google Scholar
[16] 俞炜, 邓梓龙, 吴苏晨, 于程, 王超 2019 物理学报 68 054701
Google Scholar
Yu W, Deng Z L, Wu S C, Yu C, Wang C 2019 Acta. Phys. Sin. 68 054701
Google Scholar
[17] Ghaedamini H, Salimpour M R, Mujumdar A S 2011 Appl. Therm. Eng. 31 708
Google Scholar
[18] 董涛, 陈运生, 杨朝初, 毕勤成, 吴会龙, 郑国平 2005 化工学报 56 1618
Google Scholar
Dong T, Chen Y S, Yang C C, Bi Q C, Wu H L, Zheng G P 2005 J. Chem. Eng. Data. 56 1618
Google Scholar
[19] Abo-Zahhad E M, Ookawara S, Radwan A, Elkady M F, El-Shazly A H 2020 Case Stud. Therm. Eng. 18 100587
Google Scholar
[20] Wang W, Li Y, Zhang Y, Li B, Sundén B 2019 J. Therm. Anal. Calorim. 140 1259
Google Scholar
[21] Bhandari P, Prajapati Y K 2021 Int. J. Therm. Sci. 159 106609
Google Scholar
[22] Zhang M K, Chen S, Shang Z 2012 Acta. Phys. Sin. 61 247
[23] Xia G D, Chai L, Wang H Y, Zhou M Z, Cui Z Z 2010 Appl. Therm. Eng. 31 1208
Google Scholar
[24] Wang R J, Wang J W, Lijin B Q, Zhu Z F 2018 Appl. Therm. Eng. 133 428
Google Scholar
[25] Jia Y T, Xia G D, Li Y F, Ma D D, Cai B 2018 Int. Commun. Heat Mass Transfer 92 78
Google Scholar
[26] Xie H, Yang B, Zhang S, Song M 2020 Int. J. Energy. Res. 44 3049
Google Scholar
[27] Shen H, Wang C C, Xie G 2018 Int. J. Heat Mass Transfer 117 487
Google Scholar
[28] Xie G, Shen H, Wang C C 2015 Int. J. Heat Mass Transfer 90 948
Google Scholar
[29] Li Y, Wang Z, Yang J, Liu H 2020 Appl. Therm. Eng. 175 115348
Google Scholar
[30] Li P, Guo D, Huang X 2020 Appl. Therm. Eng. 171 115060
Google Scholar
[31] Mehta S K, Pati S 2019 J. Therm. Anal. Calorim. 136 49
Google Scholar
[32] Zhang C P, Lian Y F, Yu X F, Liu W, Teng J T, Xu T T, Hsu C H, Chang Y J, Greif R 2013 Int. J. Heat Mass Transfer 66 930
Google Scholar
[33] Lee P S, Garimella S V 2006 Int. J. Heat Mass Transfer 49 3060
Google Scholar
[34] Wang W, Zhang Y, Lee K S, Li B 2019 Int. J. Heat Mass Transfer 135 706
Google Scholar
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