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Investigation of the SiC nano-bar relaxation characteristics

Long Shu-Yao Qin Jin-Qi Tian Jian-Hui Han Xu Liu Gui-Rong

Investigation of the SiC nano-bar relaxation characteristics

Long Shu-Yao, Qin Jin-Qi, Tian Jian-Hui, Han Xu, Liu Gui-Rong
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  • Abstract views:  3701
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Publishing process
  • Received Date:  24 May 2006
  • Accepted Date:  19 June 2006
  • Published Online:  05 January 2007

Investigation of the SiC nano-bar relaxation characteristics

  • 1. (1)湖南大学力学与航空航天学院,长沙 410082; (2)湖南大学汽车车身先进设计制造国家重点实验室,长沙 410082

Abstract: The SiC nano-bar relaxation has been investigated using MD method. The Tersoff potential is adopted as the potential function. The characteristic of the homeostasis of SiC nano-bar relaxation is demonstrated. The nano-bar is affected by the strong surface effect and small size effect. The phenomena of torsion and bending is observed during the relaxation.

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