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Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

Chen Xiao-Xue Teng Li-Hua Liu Xiao-Dong Huang Qi-Wen Wen Jin-Hui Lin Wei-Zhu Lai Tian-Shu

Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

Chen Xiao-Xue, Teng Li-Hua, Liu Xiao-Dong, Huang Qi-Wen, Wen Jin-Hui, Lin Wei-Zhu, Lai Tian-Shu
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  • Received Date:  30 July 2007
  • Accepted Date:  14 November 2007
  • Published Online:  20 June 2008

Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy

  • 1. 中山大学光电材料与技术国家重点实验室,物理科学与工程技术学院,广州 510275

Abstract: The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.

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