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Preparation and near-infrared luminescence properties of Bi-doped BaF2 crystal

Zhou Peng Su Liang-Bi Li Hong-Jun Yu Jun Zheng Li-He Yang Qiu-Hong Xu Jun

Preparation and near-infrared luminescence properties of Bi-doped BaF2 crystal

Zhou Peng, Su Liang-Bi, Li Hong-Jun, Yu Jun, Zheng Li-He, Yang Qiu-Hong, Xu Jun
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  • Received Date:  25 June 2009
  • Accepted Date:  20 July 2009
  • Published Online:  05 February 2010

Preparation and near-infrared luminescence properties of Bi-doped BaF2 crystal

  • 1. (1)上海大学材料科学与工程学院电子信息材料系,上海 200072; (2)上海大学材料科学与工程学院电子信息材料系,上海 200072;中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海 201800; (3)中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海 201800; (4)中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海 201800;宁波大学信息科学与工程学院光电子功能材料研究所,宁波 315211

Abstract: Bi2O3:BaF2 and BiF3:BaF2 crystals were prepared by TGT (temperature gradient method). Near-infrared broadband luminescence was observed in as-grown Bi2O3:BaF2 crystal. The emission band peaks at 961 nm in the range of 850—1250 nm,with FWHM about 202 nm. The luminescence of Bi2+ and Bi3+ ions in the visible region was observed in BiF3:BaF2 crystal, but there was no near-infrared emission. Then the BiF3: BaF2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions. Near-infrared broadband luminescence was observed in γ-irradiated BiF3:BaF2 crystal. The emission band peaks at 1135 nm in the range of 850—1500 nm,with FWHM about 192 nm. The mechanisms of near-infrared luminescence in Bi2O3:BaF2 crystals and γ-irradiated BiF3:BaF2 crystals were discussed.

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