Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

STUDY ON THE BREAKDOWN MECHANISM OF A THIN SixOyNz FILM

CHEN DOU-NAN LIU BAI-YONG ZHENG XUE-REN

STUDY ON THE BREAKDOWN MECHANISM OF A THIN SixOyNz FILM

CHEN DOU-NAN, LIU BAI-YONG, ZHENG XUE-REN
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  2283
  • PDF Downloads:  390
  • Cited By: 0
Publishing process
  • Received Date:  28 March 1988
  • Published Online:  08 July 2005

STUDY ON THE BREAKDOWN MECHANISM OF A THIN SixOyNz FILM

  • 1. 华南理工大学物理系

Abstract: The breakdown characteristics of very thin nitrided silicon oxide film have teen exammed. The breakdown mechanism of this film and the factors affecting the breakdown characteristics have been explored. It has been found that the improvement of breakdown properties of this nitrided oxide depended greatly on the changes of the microstructure of the film and interface, as well as the composition of the film. The narrowing of the band gap width of the film after nitridation makes the electric field for intrinsic breakdown decrease, but the occurrence of breadown may be greatly postponed by the dense material, the smoothed interface and the effect of traps. Experimental evidences confirmed that the im-pact-ionization exists in the intrinsic type of breakdown, but the permanent breakdown is caused by the heat transfer for all cases.

Catalog

    /

    返回文章
    返回