Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Numerical simulation of enhanced glow discharge plasma immersion ion implantation using three-dimensional PIC/MC model

He Fu-Shun Li Liu-He Li Fen Dun Dan-Dan Tao Chan-Cai

Numerical simulation of enhanced glow discharge plasma immersion ion implantation using three-dimensional PIC/MC model

He Fu-Shun, Li Liu-He, Li Fen, Dun Dan-Dan, Tao Chan-Cai
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3793
  • PDF Downloads:  535
  • Cited By: 0
Publishing process
  • Received Date:  30 March 2012
  • Accepted Date:  07 June 2012
  • Published Online:  05 November 2012

Numerical simulation of enhanced glow discharge plasma immersion ion implantation using three-dimensional PIC/MC model

  • 1. School of Mechanical Engineering and Automation, Beihang University, Beijing 100191, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 11075012).

Abstract: Enhanced glow discharge plasma immersion ion implantation is self-consistently simulated using a three-dimensional PIC/MC model. The information about ion counts, space potential, plasma density and ion incident dose is obtained. The results show that the sheath has fully expanded at 5 μs. There is a stable equilibrium of ion counts at 15 μs, which corroborates the characteristic of self-sustaining glow discharge of EGD-PIII. In the space just below anode where is found a highest plasma density, verifying the electron focusing effect. The rate of implantation is steady and the incident dose is relatively uniform except at the rim of target. A higher pulse negative bias may increase the injection rate but reduce the dose uniformity at the same time.

Reference (26)

Catalog

    /

    返回文章
    返回