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Fabrication and characterization of single Nb/NbxSi1-x/Nb Josephson junction for voltage standard

Cao Wen-Hui Li Jin-Jin Zhong Qing Guo Xiao-Wei He Qing Chi Zong-Tao

Fabrication and characterization of single Nb/NbxSi1-x/Nb Josephson junction for voltage standard

Cao Wen-Hui, Li Jin-Jin, Zhong Qing, Guo Xiao-Wei, He Qing, Chi Zong-Tao
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  • Received Date:  19 May 2012
  • Accepted Date:  11 June 2012
  • Published Online:  05 September 2012

Fabrication and characterization of single Nb/NbxSi1-x/Nb Josephson junction for voltage standard

  • 1. National Institute of Metrology, Beijing 100013, China;
  • 2. Qingdao University, Qingdao 266003, China
Fund Project:  Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAK15B00).

Abstract: The core device of Modern programmable Josephson voltage standard is Josephson junction array. The most advantageous Josephson junction array is Nb/NbxSi1-x/Nb material array. The advantages of Nb/NbxSi1-x/Nb material Josephson junction are that three-layer film production process is simple, Nb and NbxSi1-x etching processes are the same and NbxSi1-x potential barrier layer components can be easily adjusted. In this paper, we investigate the NbxSi1-x/Nb single Josephson junction in National Institute of Metrology. Through measuring the dc current-voltage characteristics under low temperature (4.2 K), superconducting tunneling current and a zero voltage state jumping to voltage state are observed clearly, finally the measurement results are discussed. The work is the first study on Nb/NbxSi1-x/Nb single Josephson junction in China.

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