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Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory

Sun Jing-Yang Wang Dong-Ming Lü Ye-Gang Wang Miao Wang Yi-Man Shen Xiang Wang Guo-Xiang Dai Shi-Xun

Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory

Sun Jing-Yang, Wang Dong-Ming, Lü Ye-Gang, Wang Miao, Wang Yi-Man, Shen Xiang, Wang Guo-Xiang, Dai Shi-Xun
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  • Received Date:  20 June 2014
  • Accepted Date:  23 August 2014
  • Published Online:  05 January 2015

Structure and phase change in Cu-Ge3Sb2Te5 films for use in phase change random access memory

  • 1. Faculty of Information Science and Engineering, Ningbo University, Zhejiang 315211, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61306147, 61377061), the National Natural Science Foundation of Ningbo (Grant No. 2014A610121), and the Magna Fund in Ningbo University sponsored by K. C. Wong.

Abstract: The Cu-Ge3Sb2Te5 thin films with different Cu contents were prepared by magnetron sputtering method. The dependence of film resistance on temperature is measured in situ by using the four-point probe heating platform. The crystal structure, microstructure, optical gap, and bond states of the Cu-Ge3Sb2Te5 films are investigated by X-ray diffraction, transmission electron microscopy, transmission and Raman spectra, respectively. It is shown that the crystallization temperature and activation energy of crystallization increase with increasing Cu content, suggesting the improvement in thermal stability and data retention ability, while optical gap decreases with increasing Cu concentration. It is observed that the Raman peak shifts from 129 cm-1 to 127 cm-1, which may be ascribed to the vibration of polar Cu–Te bonds. The Cu-Ge3Sb2Te5 crystallizes into the embedded Cu2Te and Ge2Sb2Te5 phases with evenly grown grains.

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