Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effect of temperature on the (100) surface features of type Ib and type IIa large single crystal diamonds

Zhang He Li Shang-Sheng Su Tai-Chao Hu Mei-Hua Zhou You-Mo Fan Hao-Tian Gong Chun-Sheng Jia Xiao-Peng Ma Hong-An Xiao Hong-Yu

Effect of temperature on the (100) surface features of type Ib and type IIa large single crystal diamonds

Zhang He, Li Shang-Sheng, Su Tai-Chao, Hu Mei-Hua, Zhou You-Mo, Fan Hao-Tian, Gong Chun-Sheng, Jia Xiao-Peng, Ma Hong-An, Xiao Hong-Yu
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • In this paper, by choosing FeNiMnCo alloy as a catalyst and the (100) face of a seed crystal as the growth face, high quality type Ib and type IIa large diamond single crystals (diameter about 3-4 mm) can be successfully synthesized using temperature gradient method, at 5.6 GPa pressure and different temperatures between 1250-1340 ℃. To control the diamond crystal morphology, the growth temperature should be adjusted. Then the morphology of the synthesized large diamonds is plate-like at low temperatures, tower-like at medium temperatures, and spire tower-like at high temperatures. For the same crystal morphology, the synthetic temperature of type IIa diamond single crystals is about 30 ℃ higher than that of type Ib. The central and angularity regions of the top (100) surface, for the synthesized samples of type Ib and type IIa large diamond single crystals at different temperatures, are examined by laser Raman microscope respectively. It is found that the black lines of the type Ib and type IIa large diamond single crystals become dimmed and dense on the same top surface from center to the edge. It is indicated that the priority growth mechanism is in the angularity regions, compared with the central regions. Namely the solute of carbon is primarily precipitated in the angularity regions of the (100) surface. With increasing synthesis temperature, the black lines on the top surface (100) of type Ib diamond single crystals become gradually denser, and the characteristics of the lines are transformed from irregular distribution to typical dendritic distribution. The reason of the above results is that the rate of carbon deposition (the growth rate of diamond crystal), which is along the direction of the diamond crystal [100], will gradually rise as the synthesis temperature of the crystal is increased. The characteristics of the lines on the top surfaces (100) of type IIa large diamond single crystals, which are synthesized under different temperatures, are similar to that of type Ib. However, the lines on the top (100) surface of type IIa diamonds are not so obvious and denser than that of type Ib diamonds at different synthesis temperatures. Similar characteristics of lines on the top (100) surface of both types of diamond single crystals can be explained by the axis and radial growth rate variation at different temperatures. These different characteristics of the lines are due to the fact that the growth rate of type IIa diamonds is slower than that of type Ib diamonds, and the nitrogen concentrations in type IIa diamonds are lower than those of type Ib diamonds. Finally, the full width at half maximum (5.554 cm-1) of the tower-like type IIa diamond is narrower than that (5.842 cm-1) of tower-like type Ib diamond from the test of Raman spectra. It is shown that the quality of type IIa diamond single crystals is better than that of type Ib.
      Corresponding author: Li Shang-Sheng, lishsh@hpu.edu.cn
    • Funds: Project supported by the Open Project of State Key Laboratory of Superhard Materials (Jilin University), China (Grant No. 201203), the Education Department of Henan Province, China (Grant Nos. 12A430010, 13A140792), the Opening Project of Henan Key Discipline Open Laboratory of Mining Engineering Materials, China (Grant No. KLMEM 2014-15), and the Program for Innovative Research Team of Henan Polytechnic University, China (Grant No. T2013-4).
    [1]

    Sumiya H, Toda N, Satoh S 1971 J. Phys. Chem. 75 1838

    [2]

    Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838

    [3]

    Sumiya H, Toda N, Satoh S 2002 Journal of Crystal Growth 237-239 1281

    [4]

    Sumiya H, Toda N, Nishibayashi Y, Satoh S 1997 Journal of Crystal Growth 178 485

    [5]

    Li Y, Jia X P, Shi W, Leng S L, Ma H A, Sun S S, Wang F b, Chen N, Long Y 2014 In. Journal of Refractory Metals and Hard Materials 43 147

    [6]

    Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y, Jia X P 2011 Chin. Phys. B 20 028103

    [7]

    Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101

    [8]

    Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y, Zhang Y S, Jia X P 2011 Chin. Phys. Lett. 28 068101

    [9]

    Qin J M, Zhang Y, Cao J M, Tian L F 2011 Acta Phys. Sin. 60 058102(in Chinese) [秦杰明, 张莹, 曹建明, 田立飞 2011 物理学报 60 058102]

    [10]

    Liang Z Z, Liang J Q, Zheng N, Jia X P, Li G J 2009 Acta Phys. Sin. 58 8039(in Chinese) [梁中翥, 梁静秋, 郑娜, 贾晓鹏, 李桂菊 2009 物理学报 58 8039]

    [11]

    Yang Z J, Li H Z, Zhou Y Z, Wang X Y, Luo F 2015 In. Journal of Refractory Metals and Hard Materials 48 61

    [12]

    Hu M H, Bi N, Li S S, Su T C, Hu Q, Jia X P, Ma H A 2015 In. Journal of Refractory Metals and Hard Materials 48 61

    [13]

    Yan B M, Jia X P, Sun S S, Zhou Z X, Chao F, Chen N, Li Y D, Li Y, Ma H A, Wang F b, Chen N, Long Y 2015 In. Journal of Refractory Metals and Hard Materials 48 56

    [14]

    Xiao H Y, Li S S, Qin Y K, Liang Z Z, Zhang Y S, Zhang D M, Zhang Y S 2014 Acta Phys. Sin. 63 198101(in Chinese) [肖宏宇, 李尚升, 秦玉琨, 梁中翥, 张永胜, 张冬梅, 张义顺 2014 物理学报 63 198101]

    [15]

    Kanda H, Ohsawa, T, Fukunaga, O, Sunagawa, I 1989 Journal of Crystal Growth 94 115

    [16]

    Kanda H, Ohsawa T 1996 Diamond and Related Materials 5 8

    [17]

    Zang C Y, Huang G F, Ma H A, Jia X P 2007 Chin. Phys. Lett. 24 2991

    [18]

    Zang C Y, Chen K, Hu Q, Huang G F, Chen X Z, Jia X P 2009 Journal of Synthetic Crystals 38 677(in Chinese) [臧传义, 陈奎, 胡强, 黄国锋, 陈孝洲, 贾晓鹏 2009 人工晶体学报 38 677]

  • [1]

    Sumiya H, Toda N, Satoh S 1971 J. Phys. Chem. 75 1838

    [2]

    Strong H M, Chrenko R M 1971 J. Phys. Chem. 75 1838

    [3]

    Sumiya H, Toda N, Satoh S 2002 Journal of Crystal Growth 237-239 1281

    [4]

    Sumiya H, Toda N, Nishibayashi Y, Satoh S 1997 Journal of Crystal Growth 178 485

    [5]

    Li Y, Jia X P, Shi W, Leng S L, Ma H A, Sun S S, Wang F b, Chen N, Long Y 2014 In. Journal of Refractory Metals and Hard Materials 43 147

    [6]

    Li S S, Ma H A, Li X L, Su T C, Huang G F, Li Y, Jia X P 2011 Chin. Phys. B 20 028103

    [7]

    Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101

    [8]

    Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y, Zhang Y S, Jia X P 2011 Chin. Phys. Lett. 28 068101

    [9]

    Qin J M, Zhang Y, Cao J M, Tian L F 2011 Acta Phys. Sin. 60 058102(in Chinese) [秦杰明, 张莹, 曹建明, 田立飞 2011 物理学报 60 058102]

    [10]

    Liang Z Z, Liang J Q, Zheng N, Jia X P, Li G J 2009 Acta Phys. Sin. 58 8039(in Chinese) [梁中翥, 梁静秋, 郑娜, 贾晓鹏, 李桂菊 2009 物理学报 58 8039]

    [11]

    Yang Z J, Li H Z, Zhou Y Z, Wang X Y, Luo F 2015 In. Journal of Refractory Metals and Hard Materials 48 61

    [12]

    Hu M H, Bi N, Li S S, Su T C, Hu Q, Jia X P, Ma H A 2015 In. Journal of Refractory Metals and Hard Materials 48 61

    [13]

    Yan B M, Jia X P, Sun S S, Zhou Z X, Chao F, Chen N, Li Y D, Li Y, Ma H A, Wang F b, Chen N, Long Y 2015 In. Journal of Refractory Metals and Hard Materials 48 56

    [14]

    Xiao H Y, Li S S, Qin Y K, Liang Z Z, Zhang Y S, Zhang D M, Zhang Y S 2014 Acta Phys. Sin. 63 198101(in Chinese) [肖宏宇, 李尚升, 秦玉琨, 梁中翥, 张永胜, 张冬梅, 张义顺 2014 物理学报 63 198101]

    [15]

    Kanda H, Ohsawa, T, Fukunaga, O, Sunagawa, I 1989 Journal of Crystal Growth 94 115

    [16]

    Kanda H, Ohsawa T 1996 Diamond and Related Materials 5 8

    [17]

    Zang C Y, Huang G F, Ma H A, Jia X P 2007 Chin. Phys. Lett. 24 2991

    [18]

    Zang C Y, Chen K, Hu Q, Huang G F, Chen X Z, Jia X P 2009 Journal of Synthetic Crystals 38 677(in Chinese) [臧传义, 陈奎, 胡强, 黄国锋, 陈孝洲, 贾晓鹏 2009 人工晶体学报 38 677]

  • [1] Zeng Xiong-Hui, Zhao Guang-Jun, Xu Jun. Spectra analysis of Ce:YAlOZr3 single crystals grown by temperature gradient technique. Acta Physica Sinica, 2004, 53(6): 1935-1939. doi: 10.7498/aps.53.1935
    [2] Research progress of large diamond single crystals under high pressure and high temperature. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20200692
    [3] Wang Jun-Zhuo, Li Shang-Sheng, Su Tai-Chao, Hu Mei-Hua, Hu Qiang, Wu Yu-Min, Wang Jian-Kang, Han Fei, Yu Kun-Peng, Gao Guang-Jin, Guo Ming-Ming, Jia Xiao-Peng, Ma Hong-An, Xiao Hong-Yu. Shape controlled growth for type Ib large diamond crystals. Acta Physica Sinica, 2018, 67(16): 168101. doi: 10.7498/aps.67.20180356
    [4] Xu Jun, Li Hong-Jun, Wang Jing-Ya, Zhao Guang-Jun, Zhao Zhi-Wei, Jiang Ben-Xue. Core center distribution of Nd∶YAG crystal grown by Temperature gradient technique. Acta Physica Sinica, 2007, 56(2): 1014-1019. doi: 10.7498/aps.56.1014
    [5] Xiao Hong-Yu, Su Jian-Feng, Zhang Yong-Sheng, Bao Zhi-Gang. Synthesis and characterization of the Gem-diamond by temperature gradient method. Acta Physica Sinica, 2012, 61(24): 248101. doi: 10.7498/aps.61.248101
    [6] Xiao Hong-Yu, Qin Yu-Kun, Sui Yong-Ming, Liang Zhong-Zhu, Liu Li-Na, Zhang Yong-Sheng. Effects of cavity size on the growth of hexahedral type-Ib gem-diamond single crystals. Acta Physica Sinica, 2016, 65(7): 070705. doi: 10.7498/aps.65.070705
    [7] Hu Mei-Hua, Bi Ning, Li Shang-Sheng, Su Tai-Chao, Li Xiao-Lei, Hu Qiang, Jia Xiao-Peng, Ma Hong-An. Synthesis of gem diamond crystals by multiseed method using China-type cubic high-pressure apparatus. Acta Physica Sinica, 2013, 62(18): 188103. doi: 10.7498/aps.62.188103
    [8] Fang Chao, Jia Xiao-Peng, Yan Bing-Min, Chen Ning, Li Ya-Dong, Chen Liang-Chao, Guo Long-Suo, Ma Hong-An. Effects of nitrogen and hydrogen co-doped on {100}-oriented single diamond under high temperature and high pressure. Acta Physica Sinica, 2015, 64(22): 228101. doi: 10.7498/aps.64.228101
    [9] Bai Ying, Mo Yu-Jun, Lan Yan-Na. Temperature measurement from the Raman spectra of porous silicon. Acta Physica Sinica, 2005, 54(10): 4654-4658. doi: 10.7498/aps.54.4654
    [10] You Jing-Lin, Zhou Wen-Ping, Wan Song-Ming, Zhang Xia, Zhang Qing-Li, Sun Dun-Lu, Qiu Huai-Li, Yin Shao-Tang. Study of growth units and the growth habit of PbMoO4 crystal using high temperature Raman spectra. Acta Physica Sinica, 2008, 57(11): 7305-7309. doi: 10.7498/aps.57.7305
    [11] Guo Xin-Yong, Du Zu-Liang, Ding Pei, Liang Er-Jun, Zhang Hong-Rui, Liu Yi-Zhen, Liu Hui. Growth mechanism and Raman spectroscopic study of “interlinked-cone" shaped CNx nanotubes. Acta Physica Sinica, 2003, 52(1): 237-241. doi: 10.7498/aps.52.237
    [12] Zhu Shi-Ning, Sun Dun-Lu, Qiu Huai-Li, Zhang Lian-Han, Wang Ai-Hua, Yin Shao-Tang, Hang Yin. Study on laser-micro-Raman spectra in near-stoichiometric LiNbO3 crystals. Acta Physica Sinica, 2004, 53(7): 2270-2274. doi: 10.7498/aps.53.2270
    [13] Fang Chao, Jia Xiao-Peng, Chen Ning, Zhou Zhen-Xiang, Li Ya-Dong, Li Yong, Ma Hong-An. Crystal growth and characterization of hydrogen-doped single diamond with Fe(C5H5)2 additive. Acta Physica Sinica, 2015, 64(12): 128101. doi: 10.7498/aps.64.128101
    [14] Zhou Hai-Liang, Gu Qing-Tian, Zhang Qing-Hua, Liu Bao-An, Zhu Li-Li, Zhang Li-Song, Zhang Fang, Xu Xin-Guang, Wang Zheng-Ping, Sun Xun, Zhao Xian. Raman spectroscopic study on the micro-structure of NH4H2PO4 and ND4D2PO4 crystals. Acta Physica Sinica, 2015, 64(19): 197801. doi: 10.7498/aps.64.197801
    [15] Fu Pei-Zhen, Hou Bi-Hui, Jian Yan-Zhen, Wang Ya-Li, Zhang Er-Pan, Wang Li, Zhong Ren-Bin. Terahertz spectra and soft optical phonons of PbB4O7 crystal. Acta Physica Sinica, 2010, 59(7): 4640-4645. doi: 10.7498/aps.59.4640
    [16] Zhang Ji, Wang Di, Zhang De-Ming, Zhang Qing-Li, Wan Song-Ming, Sun Dun-Lu, Yin Shao-Tang. Vibrational spectra and first principles calculation of BaBPO5 crystal. Acta Physica Sinica, 2013, 62(3): 037802. doi: 10.7498/aps.62.037802
    [17] Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030. doi: 10.7498/aps.59.8026
    [18] Zhang Shou-Zhong, Du Jian, Ma Pei-Ning, Yang Wu-Bao, Fan Song-Hua, Zhang Gu-Ling. Investigation of diamond-like-carbon films prepared by unbalanced magnetron sputtering. Acta Physica Sinica, 2005, 54(10): 4944-4948. doi: 10.7498/aps.54.4944
    [19] Wang Jing, Liu Gui-Chang, Ji Da-Peng, Xu Jun, Deng Xin-Lu. Diamond-like carbon (DLC) films deposited on copper substrate through preparation of intermediate layers. Acta Physica Sinica, 2006, 55(7): 3748-3755. doi: 10.7498/aps.55.3748
    [20] Zhou Mi, Li Zhan-Long, Lu Guo-Hui, Li Dong-Fei, Sun Cheng-Lin, Gao Shu-Qin, Li Zuo-Wei. High pressure Raman investigation on the Fermi resonance of biphenyl. Acta Physica Sinica, 2011, 60(5): 050702. doi: 10.7498/aps.60.050702
  • Citation:
Metrics
  • Abstract views:  957
  • PDF Downloads:  178
  • Cited By: 0
Publishing process
  • Received Date:  08 May 2015
  • Accepted Date:  23 June 2015
  • Published Online:  05 October 2015

Effect of temperature on the (100) surface features of type Ib and type IIa large single crystal diamonds

    Corresponding author: Li Shang-Sheng, lishsh@hpu.edu.cn
  • 1. School of Materials Science and Engineering, Henan Polytechnic University, Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Jiaozuo 454000, China;
  • 2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
  • 3. Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023, China
Fund Project:  Project supported by the Open Project of State Key Laboratory of Superhard Materials (Jilin University), China (Grant No. 201203), the Education Department of Henan Province, China (Grant Nos. 12A430010, 13A140792), the Opening Project of Henan Key Discipline Open Laboratory of Mining Engineering Materials, China (Grant No. KLMEM 2014-15), and the Program for Innovative Research Team of Henan Polytechnic University, China (Grant No. T2013-4).

Abstract: In this paper, by choosing FeNiMnCo alloy as a catalyst and the (100) face of a seed crystal as the growth face, high quality type Ib and type IIa large diamond single crystals (diameter about 3-4 mm) can be successfully synthesized using temperature gradient method, at 5.6 GPa pressure and different temperatures between 1250-1340 ℃. To control the diamond crystal morphology, the growth temperature should be adjusted. Then the morphology of the synthesized large diamonds is plate-like at low temperatures, tower-like at medium temperatures, and spire tower-like at high temperatures. For the same crystal morphology, the synthetic temperature of type IIa diamond single crystals is about 30 ℃ higher than that of type Ib. The central and angularity regions of the top (100) surface, for the synthesized samples of type Ib and type IIa large diamond single crystals at different temperatures, are examined by laser Raman microscope respectively. It is found that the black lines of the type Ib and type IIa large diamond single crystals become dimmed and dense on the same top surface from center to the edge. It is indicated that the priority growth mechanism is in the angularity regions, compared with the central regions. Namely the solute of carbon is primarily precipitated in the angularity regions of the (100) surface. With increasing synthesis temperature, the black lines on the top surface (100) of type Ib diamond single crystals become gradually denser, and the characteristics of the lines are transformed from irregular distribution to typical dendritic distribution. The reason of the above results is that the rate of carbon deposition (the growth rate of diamond crystal), which is along the direction of the diamond crystal [100], will gradually rise as the synthesis temperature of the crystal is increased. The characteristics of the lines on the top surfaces (100) of type IIa large diamond single crystals, which are synthesized under different temperatures, are similar to that of type Ib. However, the lines on the top (100) surface of type IIa diamonds are not so obvious and denser than that of type Ib diamonds at different synthesis temperatures. Similar characteristics of lines on the top (100) surface of both types of diamond single crystals can be explained by the axis and radial growth rate variation at different temperatures. These different characteristics of the lines are due to the fact that the growth rate of type IIa diamonds is slower than that of type Ib diamonds, and the nitrogen concentrations in type IIa diamonds are lower than those of type Ib diamonds. Finally, the full width at half maximum (5.554 cm-1) of the tower-like type IIa diamond is narrower than that (5.842 cm-1) of tower-like type Ib diamond from the test of Raman spectra. It is shown that the quality of type IIa diamond single crystals is better than that of type Ib.

Reference (18)

Catalog

    /

    返回文章
    返回