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Prediction on the characteristics of isothermal annealing by using isochronal an nealing data

He Bao-Ping Wang Gui-Zhen Gong Jian-Cheng Luo Yin-Hong Li Yong-Hong

Prediction on the characteristics of isothermal annealing by using isochronal an nealing data

He Bao-Ping, Wang Gui-Zhen, Gong Jian-Cheng, Luo Yin-Hong, Li Yong-Hong
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  • Received Date:  22 November 2002
  • Accepted Date:  08 January 2003
  • Published Online:  20 September 2003

Prediction on the characteristics of isothermal annealing by using isochronal an nealing data

  • 1. 西北核技术研究所,西安市69信箱六室 710613

Abstract: In this paper the characteristics of isothermal and isochronal annealing for post-radiated MOS transistor were studied. The results show that 100℃ isothermal a nnealing is the most effective treatment, while the time of isochronal annealing is the shortest. Secondly, the recovery of threshold voltage under the +5V bias is the fastest and biggest, compared to that under 0V and float bias. These predictied results by using isochronal annealing data were compared with the ex periment curve obtained from isothermal annealing, and the agreement is good.

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