ELECTRICAL CONDUCTIVITY, HALL EFFECT AND MAGNETORESISTANCE EFFECT OF InSb UNDER TEMPERATURES 80-500°K

HUANG CHII-SHENG; WU CZU-CHIANG; TIAN ZHUNG-IN

doi:10.7498/aps.20.418

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HUANG CHII-SHENG, WU CZU-CHIANG, TIAN ZHUNG-IN. ELECTRICAL CONDUCTIVITY, HALL EFFECT AND MAGNETORESISTANCE EFFECT OF InSb UNDER TEMPERATURES 80-500°KJ. Acta Physica Sinica, 1964, 20(5): 418-428. DOI: 10.7498/aps.20.418

Citation:

HUANG CHII-SHENG, WU CZU-CHIANG, TIAN ZHUNG-IN. ELECTRICAL CONDUCTIVITY, HALL EFFECT AND MAGNETORESISTANCE EFFECT OF InSb UNDER TEMPERATURES 80-500°KJ. Acta Physica Sinica, 1964, 20(5): 418-428. DOI: 10.7498/aps.20.418

Citation:

HUANG CHII-SHENG, WU CZU-CHIANG, TIAN ZHUNG-IN. ELECTRICAL CONDUCTIVITY, HALL EFFECT AND MAGNETORESISTANCE EFFECT OF InSb UNDER TEMPERATURES 80-500°KJ. Acta Physica Sinica, 1964, 20(5): 418-428. DOI: 10.7498/aps.20.418