AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS

LIN HONG-YI

doi:10.7498/aps.27.291

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LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICSJ. Acta Physica Sinica, 1978, 27(3): 291-302. DOI: 10.7498/aps.27.291

Citation:

LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICSJ. Acta Physica Sinica, 1978, 27(3): 291-302. DOI: 10.7498/aps.27.291

Citation:

LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICSJ. Acta Physica Sinica, 1978, 27(3): 291-302. DOI: 10.7498/aps.27.291