THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H

YAN CHENG

doi:10.7498/aps.31.62

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YAN CHENG. THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:HJ. Acta Physica Sinica, 1982, 31(12): 62-74. DOI: 10.7498/aps.31.62

Citation:

YAN CHENG. THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:HJ. Acta Physica Sinica, 1982, 31(12): 62-74. DOI: 10.7498/aps.31.62

Citation:

YAN CHENG. THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:HJ. Acta Physica Sinica, 1982, 31(12): 62-74. DOI: 10.7498/aps.31.62