NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXY

PENG CHENG; SHENG CHI; SUN HENG-HUI

doi:10.7498/aps.37.1025

PENG CHENG, SHENG CHI, SUN HENG-HUI. NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(6): 1025-1029. DOI: 10.7498/aps.37.1025

Citation:

PENG CHENG, SHENG CHI, SUN HENG-HUI. NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(6): 1025-1029. DOI: 10.7498/aps.37.1025

Citation:

PENG CHENG, SHENG CHI, SUN HENG-HUI. NEW C-V CHARACTERISTIC OF Si pn DIODES PREPARED BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1988, 37(6): 1025-1029. DOI: 10.7498/aps.37.1025