1988, 37(6): 881-891.
DOI: 10.7498/aps.37.881
CSTR: 32037.14.aps.37.881
1988, 37(6): 899-905.
DOI: 10.7498/aps.37.899
CSTR: 32037.14.aps.37.899
1988, 37(6): 906-915.
DOI: 10.7498/aps.37.906
CSTR: 32037.14.aps.37.906
MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTS
1988, 37(6): 916-923.
DOI: 10.7498/aps.37.916
CSTR: 32037.14.aps.37.916
1988, 37(6): 924-930.
DOI: 10.7498/aps.37.924
CSTR: 32037.14.aps.37.924
1988, 37(6): 931-940.
DOI: 10.7498/aps.37.931
CSTR: 32037.14.aps.37.931
1988, 37(6): 941-949.
DOI: 10.7498/aps.37.941
CSTR: 32037.14.aps.37.941
1988, 37(6): 950-958.
DOI: 10.7498/aps.37.950
CSTR: 32037.14.aps.37.950
1988, 37(6): 959-966.
DOI: 10.7498/aps.37.959
CSTR: 32037.14.aps.37.959
1988, 37(6): 967-973.
DOI: 10.7498/aps.37.967
CSTR: 32037.14.aps.37.967
1988, 37(6): 974-977.
DOI: 10.7498/aps.37.974
CSTR: 32037.14.aps.37.974
1988, 37(6): 978-982.
DOI: 10.7498/aps.37.978
CSTR: 32037.14.aps.37.978
1988, 37(6): 983-988.
DOI: 10.7498/aps.37.983
CSTR: 32037.14.aps.37.983
1988, 37(6): 989-995.
DOI: 10.7498/aps.37.989
CSTR: 32037.14.aps.37.989
1988, 37(6): 996-1002.
DOI: 10.7498/aps.37.996
CSTR: 32037.14.aps.37.996
1988, 37(6): 1003-1009.
DOI: 10.7498/aps.37.1003
CSTR: 32037.14.aps.37.1003
1988, 37(6): 1010-1013.
DOI: 10.7498/aps.37.1010
CSTR: 32037.14.aps.37.1010
1988, 37(6): 1014-1017.
DOI: 10.7498/aps.37.1014
CSTR: 32037.14.aps.37.1014
1988, 37(6): 1018-1024.
DOI: 10.7498/aps.37.1018
CSTR: 32037.14.aps.37.1018
1988, 37(6): 1025-1029.
DOI: 10.7498/aps.37.1025
CSTR: 32037.14.aps.37.1025
1988, 37(6): 1030-1035.
DOI: 10.7498/aps.37.1030
CSTR: 32037.14.aps.37.1030
1988, 37(6): 1036-1041.
DOI: 10.7498/aps.37.1036
CSTR: 32037.14.aps.37.1036
1988, 37(6): 1042-1047.
DOI: 10.7498/aps.37.1042
CSTR: 32037.14.aps.37.1042
1988, 37(6): 1048-1052.
DOI: 10.7498/aps.37.1048
CSTR: 32037.14.aps.37.1048


