In the present work, the behaviors of a-Ge/Ag composite layers are studied. These layers are composed of amorphous Ge film with thickness 2000 ? and Ag film with different thickness. It is found that, when the thickness of Ag film decreases, the electrical resistivity of the composite layer at room temperature becomes more and more smaller than that of Ag mono-layer with the same thickness. The proximity effect at room temperature is shown clearly by experiment. As the samples are annealed, we obtain various R(Ta)-T relations under different annealling temperature Ta and various dependences of R300k on Ta for layers withe different thickness of Ag film. Based on structural analysis by XRD and composition analysis by EMP, and observation with TEM and SEM, the new phenomena are explained.
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