[1] |
Song Jian, Li Feng, Deng Kai-Ming, Xiao Chuan-Yun, Kan Er-Jun, Lu Rui-Feng, Wu Hai-Ping. Density functional study on the stability and electronic structure of single layer Si6H4Ph2. Acta Physica Sinica,
2012, 61(24): 246801.
doi: 10.7498/aps.61.246801
|
[2] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui. Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica,
2010, 59(5): 3542-3546.
doi: 10.7498/aps.59.3542
|
[3] |
Wang Xue-Mei, Qiu Dong-Yuan, Zhang Bo. The fast- and slow-scale stabilities and chaotic motion of H-bridge sine inverter. Acta Physica Sinica,
2009, 58(4): 2248-2254.
doi: 10.7498/aps.58.2248
|
[4] |
Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo. Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica,
2003, 52(6): 1465-1468.
doi: 10.7498/aps.52.1465
|
[5] |
WU XIAN-CHENG, WANG YIN-YUE. PROPERTIES OF a-SiCxNy∶H FILMS PRODUCED BY REACTIVE-SPUTTERING. Acta Physica Sinica,
1999, 48(1): 134-139.
doi: 10.7498/aps.48.134
|
[6] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING. PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica,
1994, 43(11): 1847-1853.
doi: 10.7498/aps.43.1847
|
[7] |
QIAO HAO, ZI JIAN, XU ZHI-ZHONG, ZHANG KAI-MING. BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE. Acta Physica Sinica,
1993, 42(8): 1317-1323.
doi: 10.7498/aps.42.1317
|
[8] |
ZHAO YUE-CHAO, XIAN DING-CHANG. THERMAL STABILITY OF REACTIONS OF TRANSITION METALS WITH GaAa. Acta Physica Sinica,
1992, 41(9): 1482-1486.
doi: 10.7498/aps.41.1482
|
[9] |
WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN. CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(8): 1338-1344.
doi: 10.7498/aps.41.1338
|
[10] |
HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI. PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica,
1991, 40(10): 1677-1682.
doi: 10.7498/aps.40.1677
|
[11] |
ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN. THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1991, 40(2): 253-261.
doi: 10.7498/aps.40.253
|
[12] |
ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA. BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica,
1990, 39(12): 1982-1988.
doi: 10.7498/aps.39.1982
|
[13] |
WANG YIN-YUE, ZHANG FANG-QING, CHEN GUANG-HUA. A STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED a-SiGe:H FILMS. Acta Physica Sinica,
1990, 39(10): 1661-1664.
doi: 10.7498/aps.39.1661
|
[14] |
. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
doi: 10.7498/aps.38.1235
|
[15] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
doi: 10.7498/aps.38.829
|
[16] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
[17] |
CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI. ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica,
1988, 37(3): 481-484.
doi: 10.7498/aps.37.481
|
[18] |
WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG. OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica,
1988, 37(2): 189-196.
doi: 10.7498/aps.37.189
|
[19] |
WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
doi: 10.7498/aps.37.1119
|
[20] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|