| [1] |
Hu Yue-Hui, Yin Sheng-Yi, Chen Guang-Hua, Wu Yue-Ying, Zhou Xiao-Ming, Zhou Jian-Er, Wang Qing, Zhang Wen-Li. Investigation of a-Si:H film characteristics influenced by magnetic field gradient in MWECR CVD plasma system. Acta Physica Sinica,
2004, 53(7): 2263-2269.
doi: 10.7498/aps.53.2263
|
| [2] |
Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo. Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica,
2003, 52(6): 1465-1468.
doi: 10.7498/aps.52.1465
|
| [3] |
DU KAI-YING, RAO HAI-BO. NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica,
1994, 43(6): 966-972.
doi: 10.7498/aps.43.966
|
| [4] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING. PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica,
1994, 43(11): 1847-1853.
doi: 10.7498/aps.43.1847
|
| [5] |
WANG YIN-YUE, XU HUAI-ZHE, CHEN GUANG-HUA. INVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(2): 302-305.
doi: 10.7498/aps.41.302
|
| [6] |
WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN. CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1992, 41(8): 1338-1344.
doi: 10.7498/aps.41.1338
|
| [7] |
ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN. THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1991, 40(2): 253-261.
doi: 10.7498/aps.40.253
|
| [8] |
HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI. PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica,
1991, 40(10): 1677-1682.
doi: 10.7498/aps.40.1677
|
| [9] |
ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA. BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica,
1990, 39(12): 1982-1988.
doi: 10.7498/aps.39.1982
|
| [10] |
ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING. GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica,
1989, 38(1): 163-169.
doi: 10.7498/aps.38.163
|
| [11] |
. LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica,
1989, 38(8): 1235-1244.
doi: 10.7498/aps.38.1235
|
| [12] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
doi: 10.7498/aps.38.829
|
| [13] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE. THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica,
1988, 37(8): 1291-1297.
doi: 10.7498/aps.37.1291
|
| [14] |
WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG. OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica,
1988, 37(2): 189-196.
doi: 10.7498/aps.37.189
|
| [15] |
WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
doi: 10.7498/aps.37.1119
|
| [16] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
doi: 10.7498/aps.36.524
|
| [17] |
WANG WAN-LU, LIAO KE-JUN. STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica,
1987, 36(12): 1529-1537.
doi: 10.7498/aps.36.1529
|
| [18] |
SU ZI-MIN, PENG SHAO-QI. DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica,
1986, 35(6): 731-740.
doi: 10.7498/aps.35.731
|
| [19] |
HE YU-LIANG, YAN YONG-HONG. THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica,
1984, 33(10): 1472-1474.
doi: 10.7498/aps.33.1472
|
| [20] |
YAN CHENG. THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H. Acta Physica Sinica,
1982, 31(12): 62-74.
doi: 10.7498/aps.31.62
|
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