[1] |
Huang Shi-Hao, Xie Wen-Ming, Wang Han-Cong, Lin Guang-Yang, Wang Jia-Qi, Huang Wei, Li Cheng. Lattice scattering in n-type Ge-on-Si based on the unique dual-valley transitions. Acta Physica Sinica,
2018, 67(4): 040501.
doi: 10.7498/aps.67.20171413
|
[2] |
Li Chang, Xue Wei, Han Chang-Feng, Qian Lei, Zhao Su-Ling, Yu Zhi-Nong, Zhang Ting, Wang Ling-Xue. Effect of ZnO electron-transport layer on light-soaking issue in inverted polymer solar cells. Acta Physica Sinica,
2015, 64(8): 088401.
doi: 10.7498/aps.64.088401
|
[3] |
Gao Kuang-Hong, Wei Lai-Ming, Yu Guo-Lin, Yang Rui, Lin Tie, Wei Yan-Feng, Yang Jian-Rong, Sun Lei, Dai Ning, Chu Jun-Hao. Magnetotransport property of HgCdTe inversion layer. Acta Physica Sinica,
2012, 61(2): 027301.
doi: 10.7498/aps.61.027301
|
[4] |
Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan. The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica,
2012, 61(3): 036202.
doi: 10.7498/aps.61.036202
|
[5] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
doi: 10.7498/aps.60.017202
|
[6] |
Yu Hua-Ling. Abnormal minigap induced by superconducting proximity effects in a metallic film. Acta Physica Sinica,
2007, 56(10): 6038-6044.
doi: 10.7498/aps.56.6038
|
[7] |
Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia. The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica,
2006, 55(5): 2498-2503.
doi: 10.7498/aps.55.2498
|
[8] |
Gao Jun, Jiang Xiao-Long, Ren Shang-Kun, Ni Gang, Zhang Feng-Ming, Du You-Wei. Extraordinary Hall effect in FexSn100-x granular alloy films. Acta Physica Sinica,
2004, 53(1): 226-228.
doi: 10.7498/aps.53.226
|
[9] |
ZHENG YONG-MEI, CHEN YU, MIAO RONG-ZHI. ON THE CONTINUOUS TRANSITION FROM PTC EFFECT TO GBBL CAPACITOR FOR BaTiO3 SEMICONDUCTING CERAMICS——APPLICATION OF THE GRAIN BOUNDARY BARRIER MODEL. Acta Physica Sinica,
1996, 45(9): 1543-1550.
doi: 10.7498/aps.45.1543
|
[10] |
LI YU-ZHI, XU CUN-YI, ZHOU GUI-EN, LIU HONG-BAO, ZHANG YU-HENG. THE MUTUAL DIFFUSION AND ABNORMAL RESISTIVITY BEHAVIOUR IN ANNEALED a-Ge/Pb LAYER. Acta Physica Sinica,
1993, 42(5): 832-839.
doi: 10.7498/aps.42.832
|
[11] |
XING XU. EXPERIMENTAL INVESTIGATION MECHANISM ANOMALOUS HALL EFFECT OF n-Ge ABOVE ROOM TEMPERATURE. Acta Physica Sinica,
1990, 39(4): 614-619.
doi: 10.7498/aps.39.614
|
[12] |
. ELECTRON CORRELATION AND MANY一BODY WAVE FUNC-TION OF THE SEMICONDUCTOR INVERSION LAYER. Acta Physica Sinica,
1989, 38(8): 1271-1279.
doi: 10.7498/aps.38.1271
|
[13] |
WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI. STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS. Acta Physica Sinica,
1988, 37(7): 1203-1208.
doi: 10.7498/aps.37.1203
|
[14] |
ZHANG YU-HENG, LIU HONG-BAO. THE PROXIMITY EFFECT AND MUTUAL DIFFUSION IN a-Ge/Ag LAYERS. Acta Physica Sinica,
1988, 37(6): 950-958.
doi: 10.7498/aps.37.950
|
[15] |
XIA MENG-FEN. THE ANOMALOUS DIFFUSION EFFECT IN A STOCHASTIC MAGNETIC FIELD. Acta Physica Sinica,
1981, 30(9): 1275-1278.
doi: 10.7498/aps.30.1275
|
[16] |
FUNG SI-CHI, LOG BIN-CHANG, TON FU-DI, CHANG YEN-SING, HONG FU-GUN, TAM HOA-YEN. MEASUREMENTS OF RESISTIVITY AND HALL EFFECT IN SILICON CARBIDE BY THE VAN DER PAUW METHOD. Acta Physica Sinica,
1966, 22(9): 967-975.
doi: 10.7498/aps.22.967
|
[17] |
. МЕТОД ЗФФЕКТА ХОЛЛА ОПРЕДЕЛЕНИИЮ ПОВЕРХНОСТНОЙ КОНЦЕНТРАЦИИ НА ДИФФУЗИОННОМ СЛОЕПЛУПРОВОД-НИКА,ГЛУБИНЫ ЭЛЕКТРОННО-ДЫРОЧНОГО ПЕРЕ-. Acta Physica Sinica,
1966, 22(8): 877-885.
doi: 10.7498/aps.22.877
|
[18] |
. . Acta Physica Sinica,
1964, 20(9): 931-937.
doi: 10.7498/aps.20.931
|
[19] |
TANG PU-SHAN, HUO MING-HSIA, CHEN TSO-YU, WANG CHU. THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR. Acta Physica Sinica,
1963, 19(7): 448-455.
doi: 10.7498/aps.19.448
|
[20] |
. АНТИВОЛНОВОДНОЕ РАСПРОСТРАНЕНИЕ В НЕОДНОРОДНОМ СЛОЕ. Acta Physica Sinica,
1961, 17(4): 180-190.
doi: 10.7498/aps.17.180
|