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中国物理学会期刊
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INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1989, 38(8): 1265-1270. DOI: 10.7498/aps.38.1265
Citation: INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXYJ. Acta Physica Sinica, 1989, 38(8): 1265-1270. DOI: 10.7498/aps.38.1265
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INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY

Acta Phys. Sin., 1989, 38(8): 1265-1270.
DOI: 10.7498/aps.38.1265
CSTR: 32037.14.aps.38.1265
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