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中国物理学会期刊
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ZHU MEI-FANG, XU ZHENG-YI. AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRAJ. Acta Physica Sinica, 1989, 38(12): 1988-1995. DOI: 10.7498/aps.38.1988
Citation: ZHU MEI-FANG, XU ZHENG-YI. AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRAJ. Acta Physica Sinica, 1989, 38(12): 1988-1995. DOI: 10.7498/aps.38.1988
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AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA

Acta Phys. Sin., 1989, 38(12): 1988-1995.
DOI: 10.7498/aps.38.1988
CSTR: 32037.14.aps.38.1988
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