PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION

Chen Kai-mao; Jin Si-xuan; Qiu Su-juan

doi:10.7498/aps.43.1352

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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan. PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATIONJ. Acta Physica Sinica, 1994, 43(8): 1352-1359. DOI: 10.7498/aps.43.1352

Citation:

Chen Kai-mao, Jin Si-xuan, Qiu Su-juan. PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATIONJ. Acta Physica Sinica, 1994, 43(8): 1352-1359. DOI: 10.7498/aps.43.1352

Citation:

Chen Kai-mao, Jin Si-xuan, Qiu Su-juan. PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATIONJ. Acta Physica Sinica, 1994, 43(8): 1352-1359. DOI: 10.7498/aps.43.1352