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中国物理学会期刊
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MA BING-XIAN, JIA YU, FAN XI-QING. INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110)J. Acta Physica Sinica, 1998, 47(6): 970-977. DOI: 10.7498/aps.47.970
Citation: MA BING-XIAN, JIA YU, FAN XI-QING. INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110)J. Acta Physica Sinica, 1998, 47(6): 970-977. DOI: 10.7498/aps.47.970
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INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110)

Acta Phys. Sin., 1998, 47(6): 970-977.
DOI: 10.7498/aps.47.970
CSTR: 32037.14.aps.47.970
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