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中国物理学会期刊
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ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI. STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTUREJ. Acta Physica Sinica, 2001, 50(8): 1585-1589. DOI: 10.7498/aps.50.1585
Citation: ZHANG JIN-CHENG, HAO YUE, ZHU ZHI-WEI. STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTUREJ. Acta Physica Sinica, 2001, 50(8): 1585-1589. DOI: 10.7498/aps.50.1585
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STUDY ON HIGH ELECTRIC FIELD ANNEALING EFFECT IN THIN GATE OXIDE OF MOS STRUCTURE

Acta Phys. Sin., 2001, 50(8): 1585-1589.
DOI: 10.7498/aps.50.1585
CSTR: 32037.14.aps.50.1585
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