Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells

Zhang Ji-Cai; Wang Jian-Feng; Wang Yu-Tian; Yang Hui

doi:10.7498/aps.53.2467

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Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2004, 53(8): 2467-2471. DOI: 10.7498/aps.53.2467

Citation:

Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2004, 53(8): 2467-2471. DOI: 10.7498/aps.53.2467

Citation:

Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wellsJ. Acta Physica Sinica, 2004, 53(8): 2467-2471. DOI: 10.7498/aps.53.2467