Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors

Qiao Ming; Zhang Bo; Li Zhao-Ji; Fang Jian; Zhou Xian-Da

doi:10.7498/aps.56.3990

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Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da. Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistorsJ. Acta Physica Sinica, 2007, 56(7): 3990-3995. DOI: 10.7498/aps.56.3990

Citation:

Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da. Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistorsJ. Acta Physica Sinica, 2007, 56(7): 3990-3995. DOI: 10.7498/aps.56.3990

Citation:

Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da. Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistorsJ. Acta Physica Sinica, 2007, 56(7): 3990-3995. DOI: 10.7498/aps.56.3990