Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channel

Liu Kui; Ding Hong-Lin; Zhang Xian-Gao; Yu Lin-Wei; Huang Xin-Fan; Chen Kun-Ji

doi:10.7498/aps.57.7052

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Liu Kui, Ding Hong-Lin, Zhang Xian-Gao, Yu Lin-Wei, Huang Xin-Fan, Chen Kun-Ji. Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channelJ. Acta Physica Sinica, 2008, 57(11): 7052-7056. DOI: 10.7498/aps.57.7052

Citation:

Liu Kui, Ding Hong-Lin, Zhang Xian-Gao, Yu Lin-Wei, Huang Xin-Fan, Chen Kun-Ji. Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channelJ. Acta Physica Sinica, 2008, 57(11): 7052-7056. DOI: 10.7498/aps.57.7052

Citation:

Liu Kui, Ding Hong-Lin, Zhang Xian-Gao, Yu Lin-Wei, Huang Xin-Fan, Chen Kun-Ji. Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channelJ. Acta Physica Sinica, 2008, 57(11): 7052-7056. DOI: 10.7498/aps.57.7052