Xi Guang-Yi, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Ren Fan, Han Yan-Jun, Sun Chang-Zheng, Luo Yi. Dependence of GaN film sheet resistance on the N2 carrier gas percentageJ. Acta Physica Sinica, 2008, 57(11): 7233-7237. DOI: 10.7498/aps.57.7233
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Citation:
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Xi Guang-Yi, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Ren Fan, Han Yan-Jun, Sun Chang-Zheng, Luo Yi. Dependence of GaN film sheet resistance on the N2 carrier gas percentageJ. Acta Physica Sinica, 2008, 57(11): 7233-7237. DOI: 10.7498/aps.57.7233
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Xi Guang-Yi, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Ren Fan, Han Yan-Jun, Sun Chang-Zheng, Luo Yi. Dependence of GaN film sheet resistance on the N2 carrier gas percentageJ. Acta Physica Sinica, 2008, 57(11): 7233-7237. DOI: 10.7498/aps.57.7233
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Citation:
|
Xi Guang-Yi, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Ren Fan, Han Yan-Jun, Sun Chang-Zheng, Luo Yi. Dependence of GaN film sheet resistance on the N2 carrier gas percentageJ. Acta Physica Sinica, 2008, 57(11): 7233-7237. DOI: 10.7498/aps.57.7233
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