Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

Xi Guang-Yi; Ren Fan; Hao Zhi-Biao; Wang Lai; Li Hong-Tao; Jiang Yang; Zhao Wei; Han Yan-Jun; Luo Yi

doi:10.7498/aps.57.7238

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Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2008, 57(11): 7238-7243. DOI: 10.7498/aps.57.7238

Citation:

Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2008, 57(11): 7238-7243. DOI: 10.7498/aps.57.7238

Citation:

Xi Guang-Yi, Ren Fan, Hao Zhi-Biao, Wang Lai, Li Hong-Tao, Jiang Yang, Zhao Wei, Han Yan-Jun, Luo Yi. Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTsJ. Acta Physica Sinica, 2008, 57(11): 7238-7243. DOI: 10.7498/aps.57.7238