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中国物理学会期刊
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFETJ. Acta Physica Sinica, 2009, 58(7): 4948-4952. DOI: 10.7498/aps.58.4948
Citation: Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun. Threshold voltage model of strained Si channel nMOSFETJ. Acta Physica Sinica, 2009, 58(7): 4948-4952. DOI: 10.7498/aps.58.4948
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Threshold voltage model of strained Si channel nMOSFET

Acta Phys. Sin., 2009, 58(7): 4948-4952.
DOI: 10.7498/aps.58.4948
CSTR: 32037.14.aps.58.4948
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