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中国物理学会期刊
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
Citation: Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectricJ. Acta Physica Sinica, 2010, 59(11): 8131-8136. DOI: 10.7498/aps.59.8131
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Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric

Acta Phys. Sin., 2010, 59(11): 8131-8136.
DOI: 10.7498/aps.59.8131
CSTR: 32037.14.aps.59.8131
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