Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane

Ma Qun-Gang; Wang Hai-Hong; Zhang Sheng-Dong; Chen Xu; Wang Ting-Ting

doi:10.7498/aps.68.20190646

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Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplaneJ. Acta Physica Sinica, 2019, 68(15): 158501. DOI: 10.7498/aps.68.20190646

Citation:

Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplaneJ. Acta Physica Sinica, 2019, 68(15): 158501. DOI: 10.7498/aps.68.20190646

Citation:

Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting. Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplaneJ. Acta Physica Sinica, 2019, 68(15): 158501. DOI: 10.7498/aps.68.20190646