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中国物理学会期刊
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Zhao Yi, Li Jun-Kang, Zheng Ze-Jie. Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistorsJ. Acta Physica Sinica, 2019, 68(16): 167301. DOI: 10.7498/aps.68.20191146
Citation: Zhao Yi, Li Jun-Kang, Zheng Ze-Jie. Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistorsJ. Acta Physica Sinica, 2019, 68(16): 167301. DOI: 10.7498/aps.68.20191146
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Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistors

Acta Phys. Sin., 2019, 68(16): 167301.
DOI: 10.7498/aps.68.20191146
CSTR: 32037.14.aps.68.20191146
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