Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devicesJ. Acta Physica Sinica, 2020, 69(7): 078501. DOI: 10.7498/aps.69.20191557
|
Citation:
|
Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devicesJ. Acta Physica Sinica, 2020, 69(7): 078501. DOI: 10.7498/aps.69.20191557
|
Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devicesJ. Acta Physica Sinica, 2020, 69(7): 078501. DOI: 10.7498/aps.69.20191557
|
Citation:
|
Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devicesJ. Acta Physica Sinica, 2020, 69(7): 078501. DOI: 10.7498/aps.69.20191557
|
DownLoad: