Resistive switching behavior and mechanism of multilayer MoS<sub>2</sub> memtransistor under control of back gate bias and light illumination

Deng Wen; Wang Li-Sheng; Liu Jia-Ning; Yu Xue-Ling; Chen Feng-Xiang

doi:10.7498/aps.70.20210750

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Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illuminationJ. Acta Physica Sinica, 2021, 70(21): 217302. DOI: 10.7498/aps.70.20210750

Citation:

Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illuminationJ. Acta Physica Sinica, 2021, 70(21): 217302. DOI: 10.7498/aps.70.20210750

Citation:

Deng Wen, Wang Li-Sheng, Liu Jia-Ning, Yu Xue-Ling, Chen Feng-Xiang. Resistive switching behavior and mechanism of multilayer MoS2 memtransistor under control of back gate bias and light illuminationJ. Acta Physica Sinica, 2021, 70(21): 217302. DOI: 10.7498/aps.70.20210750