Capacitance model for nanowire gate-all-around tunneling field-effect-transistors

Lu Bin; Wang Da-Wei; Chen Yu-Lei; Cui Yan; Miao Yuan-Hao; Dong Lin-Peng

doi:10.7498/aps.70.20211128

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Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng. Capacitance model for nanowire gate-all-around tunneling field-effect-transistorsJ. Acta Physica Sinica, 2021, 70(21): 218501. DOI: 10.7498/aps.70.20211128

Citation:

Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng. Capacitance model for nanowire gate-all-around tunneling field-effect-transistorsJ. Acta Physica Sinica, 2021, 70(21): 218501. DOI: 10.7498/aps.70.20211128

Citation:

Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng. Capacitance model for nanowire gate-all-around tunneling field-effect-transistorsJ. Acta Physica Sinica, 2021, 70(21): 218501. DOI: 10.7498/aps.70.20211128