Failure mechanism of double-trench (DT) 4H-SiC power MOSFET under unclamped inductive switch test

Guo Jian-Fei; Li Hao; Wang Zi-Ming; Zhong Ming-Hao; Chang Shuai-Jun; Ou Shu-Ji; Ma Hai-Lun; Liu Li

doi:10.7498/aps.71.20220095

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Guo Jian-Fei, Li Hao, Wang Zi-Ming, Zhong Ming-Hao, Chang Shuai-Jun, Ou Shu-Ji, Ma Hai-Lun, Liu Li. Failure mechanism of double-trench (DT) 4H-SiC power MOSFET under unclamped inductive switch testJ. Acta Physica Sinica, 2022, 71(13): 137302. DOI: 10.7498/aps.71.20220095

Citation:

Guo Jian-Fei, Li Hao, Wang Zi-Ming, Zhong Ming-Hao, Chang Shuai-Jun, Ou Shu-Ji, Ma Hai-Lun, Liu Li. Failure mechanism of double-trench (DT) 4H-SiC power MOSFET under unclamped inductive switch testJ. Acta Physica Sinica, 2022, 71(13): 137302. DOI: 10.7498/aps.71.20220095

Citation:

Guo Jian-Fei, Li Hao, Wang Zi-Ming, Zhong Ming-Hao, Chang Shuai-Jun, Ou Shu-Ji, Ma Hai-Lun, Liu Li. Failure mechanism of double-trench (DT) 4H-SiC power MOSFET under unclamped inductive switch testJ. Acta Physica Sinica, 2022, 71(13): 137302. DOI: 10.7498/aps.71.20220095