Effect of  high-temperature on holding characteristics in MOSFET ESD protecting device

Li Ming-Zhu; Cai Xiao-Wu; Zeng Chuan-Bin; Li Xiao-Jing; Li Duo-Li; Ni Tao; Wang Juan-Juan; Han Zheng-Sheng; Zhao Fa-Zhan

doi:10.7498/aps.71.20220172

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Li Ming-Zhu, Cai Xiao-Wu, Zeng Chuan-Bin, Li Xiao-Jing, Li Duo-Li, Ni Tao, Wang Juan-Juan, Han Zheng-Sheng, Zhao Fa-Zhan. Effect of high-temperature on holding characteristics in MOSFET ESD protecting deviceJ. Acta Physica Sinica, 2022, 71(12): 128501. DOI: 10.7498/aps.71.20220172

Citation:

Li Ming-Zhu, Cai Xiao-Wu, Zeng Chuan-Bin, Li Xiao-Jing, Li Duo-Li, Ni Tao, Wang Juan-Juan, Han Zheng-Sheng, Zhao Fa-Zhan. Effect of high-temperature on holding characteristics in MOSFET ESD protecting deviceJ. Acta Physica Sinica, 2022, 71(12): 128501. DOI: 10.7498/aps.71.20220172

Citation:

Li Ming-Zhu, Cai Xiao-Wu, Zeng Chuan-Bin, Li Xiao-Jing, Li Duo-Li, Ni Tao, Wang Juan-Juan, Han Zheng-Sheng, Zhao Fa-Zhan. Effect of high-temperature on holding characteristics in MOSFET ESD protecting deviceJ. Acta Physica Sinica, 2022, 71(12): 128501. DOI: 10.7498/aps.71.20220172