Modulation of MoSH/WSi<sub>2</sub>N<sub>4</sub> Schottky-junction barrier by external electric field and biaxial strain

Liang Qian; Qian Guo-Lin; Luo Xiang-Yan; Liang Yong-Chao; Xie Quan

doi:10.7498/aps.71.20220882

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Liang Qian, Qian Guo-Lin, Luo Xiang-Yan, Liang Yong-Chao, Xie Quan. Modulation of MoSH/WSi2N4 Schottky-junction barrier by external electric field and biaxial strainJ. Acta Physica Sinica, 2022, 71(21): 217301. DOI: 10.7498/aps.71.20220882

Citation:

Liang Qian, Qian Guo-Lin, Luo Xiang-Yan, Liang Yong-Chao, Xie Quan. Modulation of MoSH/WSi2N4 Schottky-junction barrier by external electric field and biaxial strainJ. Acta Physica Sinica, 2022, 71(21): 217301. DOI: 10.7498/aps.71.20220882

Citation:

Liang Qian, Qian Guo-Lin, Luo Xiang-Yan, Liang Yong-Chao, Xie Quan. Modulation of MoSH/WSi2N4 Schottky-junction barrier by external electric field and biaxial strainJ. Acta Physica Sinica, 2022, 71(21): 217301. DOI: 10.7498/aps.71.20220882