Photoelectric modulation and resistive switching characteristic of ReSe<sub>2</sub>/WSe<sub>2</sub> memtransistor

Yu Xue-Ling; Chen Feng-Xiang; Xiang Tao; Deng Wen; Liu Jia-Ning; Wang Li-Sheng

doi:10.7498/aps.71.20221154

Search

x

Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng. Photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistorJ. Acta Physica Sinica, 2022, 71(21): 217302. DOI: 10.7498/aps.71.20221154

Citation:

Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng. Photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistorJ. Acta Physica Sinica, 2022, 71(21): 217302. DOI: 10.7498/aps.71.20221154

Citation:

Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng. Photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistorJ. Acta Physica Sinica, 2022, 71(21): 217302. DOI: 10.7498/aps.71.20221154