Performance and low power consumption of two-dimensional SiC field effect transistors regulated and optimized with asymmetric electrodes

CHEN Jianju; PENG Shuping; DENG Shuling; ZHOU Wen; FAN Zhiqiang; ZHANG Xiaojiao

doi:10.7498/aps.74.20250849

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CHEN Jianju, PENG Shuping, DENG Shuling, ZHOU Wen, FAN Zhiqiang, ZHANG Xiaojiao. Performance and low power consumption of two-dimensional SiC field effect transistors regulated and optimized with asymmetric electrodesJ. Acta Physica Sinica, 2025, 74(19): 198502. DOI: 10.7498/aps.74.20250849

Citation:

CHEN Jianju, PENG Shuping, DENG Shuling, ZHOU Wen, FAN Zhiqiang, ZHANG Xiaojiao. Performance and low power consumption of two-dimensional SiC field effect transistors regulated and optimized with asymmetric electrodesJ. Acta Physica Sinica, 2025, 74(19): 198502. DOI: 10.7498/aps.74.20250849

Citation:

CHEN Jianju, PENG Shuping, DENG Shuling, ZHOU Wen, FAN Zhiqiang, ZHANG Xiaojiao. Performance and low power consumption of two-dimensional SiC field effect transistors regulated and optimized with asymmetric electrodesJ. Acta Physica Sinica, 2025, 74(19): 198502. DOI: 10.7498/aps.74.20250849