Hot-carrier degradation mechanism and optimization design of low-voltage N-channel lateral double-diffused metal-oxide-semiconductor field-effect transistors

ZOU Mingyang; QIAO Ming; ZHANG Bo

doi:10.7498/aps.75.20260115

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ZOU Mingyang, QIAO Ming, ZHANG Bo. Hot-carrier degradation mechanism and optimization design of low-voltage N-channel lateral double-diffused metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2026, 75(15): 150708. DOI: 10.7498/aps.75.20260115

Citation:

ZOU Mingyang, QIAO Ming, ZHANG Bo. Hot-carrier degradation mechanism and optimization design of low-voltage N-channel lateral double-diffused metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2026, 75(15): 150708. DOI: 10.7498/aps.75.20260115

Citation:

ZOU Mingyang, QIAO Ming, ZHANG Bo. Hot-carrier degradation mechanism and optimization design of low-voltage N-channel lateral double-diffused metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica, 2026, 75(15): 150708. DOI: 10.7498/aps.75.20260115