Research progress of high-density resistive random-access memory

ZHAO Dongxue; WANG Zongwei; YANG Gaoqi; WU Zimeng; QIU Yuchen; SUN Jingwei; CAI Yimao

doi:10.7498/aps.75.20260651

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ZHAO Dongxue, WANG Zongwei, YANG Gaoqi, WU Zimeng, QIU Yuchen, SUN Jingwei, CAI Yimao. Research progress of high-density resistive random-access memory. Acta Physica Sinica, 2026, 75(18). DOI: 10.7498/aps.75.20260651

Citation:

ZHAO Dongxue, WANG Zongwei, YANG Gaoqi, WU Zimeng, QIU Yuchen, SUN Jingwei, CAI Yimao. Research progress of high-density resistive random-access memory. Acta Physica Sinica, 2026, 75(18). DOI: 10.7498/aps.75.20260651

Citation:

ZHAO Dongxue, WANG Zongwei, YANG Gaoqi, WU Zimeng, QIU Yuchen, SUN Jingwei, CAI Yimao. Research progress of high-density resistive random-access memory. Acta Physica Sinica, 2026, 75(18). DOI: 10.7498/aps.75.20260651