High-voltage low-loss GaN power transistors and their integration techniques

LUO Xiaorong; WEI Zijun; DENG Gaoqiang; WEI Jie; LI Zhaoji; ZHANG Bo

doi:10.7498/aps.75.20260966

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中国物理学会期刊

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LUO Xiaorong, WEI Zijun, DENG Gaoqiang, WEI Jie, LI Zhaoji, ZHANG Bo. High-voltage low-loss GaN power transistors and their integration techniques. Acta Physica Sinica, 2026, 75(18): 180809. DOI: 10.7498/aps.75.20260966

Citation:

LUO Xiaorong, WEI Zijun, DENG Gaoqiang, WEI Jie, LI Zhaoji, ZHANG Bo. High-voltage low-loss GaN power transistors and their integration techniques. Acta Physica Sinica, 2026, 75(18): 180809. DOI: 10.7498/aps.75.20260966

Citation:

LUO Xiaorong, WEI Zijun, DENG Gaoqiang, WEI Jie, LI Zhaoji, ZHANG Bo. High-voltage low-loss GaN power transistors and their integration techniques. Acta Physica Sinica, 2026, 75(18): 180809. DOI: 10.7498/aps.75.20260966