Modeling and performance analysis of resonant self-biased magnetoelectric transducers

Xie Bing-Hong; Xu Guo-Kai; Lei Bao-Xin; Xiao Shao-Qiu; Yu Zhong-Jun; Zhu Da-Li

doi:10.7498/aps.73.20240615

Abstract

Compared with single-phase multiferroic materials, magnetoelectric (ME) composites composed of piezoelectric and magnetostrictive materials have great ME coupling, and have received widespread attention in various application fields. The application of ME devices in wireless power transfer (WPT) is attractive due to their compactness and ability to operate at lower frequencies than conventional coils. However, traditional ME composites rely on permanent magnets or electromagnets to provide biased magnetic fields, thus leading to problems such as high noise, large size, and high cost, which significantly hinder the advancement of miniaturized and high-performance ME devices. To solve this problem, a self-biased ME laminated structure based on the magnetization grading effect is proposed in this work. Using the equivalent magnetization and nonlinear magnetostrictive constitutive relationship, a finite element simulation model for a self-biased ME transducer operating in L-T mode is constructed. The ME coupling performances without DC bias in bending vibration mode and stretching vibration mode are studied. Based on the model, the corresponding experimental samples are prepared for measurement. The measurement results are in agreement with the simulation data, thereby validating the accuracy and effectiveness of the model. The measured results show that the Metglas/Galfenol/PZT-5A structure can exhibit more significant self-biased ME effect under the stretching resonance mode than under bending resonance mode. Its ME coefficient attains a notable value of 10.7 V·cm^–1·Oe^–1 at 99.4 kHz, while ME power coefficient reaches 5.01 μW·Oe^–2 at 97.9 kHz. Its on-load ME power coefficient can reach up to 4.62 μW·Oe^–2 at 99.3 kHz without impedance matching. When an external bias magnetic field of 25 Oe is applied, these performance indexes increase significantly to 47.06 V·cm^–1·Oe^–1 at 99.4 kHz and 82.13 μW·Oe^–2 at 99.0 kHz, respectively. The simulation results further show that the performance of the self-biased ME transducer can be significantly improved by increasing the thickness of the high permeability layer. For example, by increasing the Metglas layer thickness from 30 μm to 90 μm, both the ME coefficient and ME power coefficient increase rapidly by 2.47 times and 6.96 times the original values, respectively. Self-biased ME transducers effectively reduce the dependence on external bias magnetic field, thereby providing a good approach for applying and developing ME composites in low-frequency WPT systems.

Keywords:

Authors and contacts

1.
Institute of Aerospace Information Innovation, Chinese Academy of Sciences, Beijing 100094, China
2.
Institute of Information Engineering, Chinese Academy of Sciences, Beijing 100085, China
3.
School of Systems Science and Engineering, Sun Yat-sen University, Guangzhou 510275, China
4.
School of Cyberspace Security, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Xu Guo-Kai, xugk3@mail2.sysu.edu.cn ; Xiao Shao-Qiu, xiaoshq8@mail.sysu.edu.cn ;

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0716500) and the National Natural Science Foundation of China (Grant No. 62171487).

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References

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[36]	李鸣鹤 2023 硕士学位论文 (长春: 吉林大学) Li M H 2023 M. S. Thesis (Changchun: Jilin University
[37]	谢冰鸿, 徐国凯, 肖绍球, 喻忠军, 朱大立 2023 物理学报 72 117501 Google Scholar Xie B H, Xu G K, Xiao S Q, Yu Z J, Zhu D L 2023 Acta Phys. Sin. 72 117501 Google Scholar
[38]	罗志高 2019 大学物理实验 32 9 Google Scholar Luo Z G 2019 Phys. Exp. Coll. 32 9 Google Scholar
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[40]	Zhang J T, Li P, Wen Y M, He W, Yang A C, Lu C J 2014 Sens. Actuators A 214 149 Google Scholar
[41]	Annapureddy V, Park S H, Song H, Ryu J 2023 J. Alloy. Compd. 957 170121 Google Scholar

Cited By

图 1 (a) 自偏置磁电换能器结构示意图; (b) 压电层的局部坐标系, 与空间坐标系一致; (c) 磁致伸缩层的局部坐标系

Figure 1. (a) Schematic diagram of a self-biased magnetoelectric transducer; (b) local coordinate of the piezoelectric layer is consistent with the global coordinate; (c) local coordinate of the magnetostrictive layer.

DownLoad: Full-Size Img PowerPoint

图 2 各接口之间的耦合及仿真计算方案

Figure 2. Coupling between each interface and simulation calculation scheme.

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图 3 (a) 磁-力-电耦合等效电路; (b) 戴维南等效电路

Figure 3. (a) Magneto-elastic-electric coupling equivalent circuit; (b) Thevenin equivalent circuit.

DownLoad: Full-Size Img PowerPoint

图 4 自偏置磁电换能器样品及实验测量装置

Figure 4. Self-biased magnetoelectric transducer sample and experimental equipment.

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图 5 不同振动模式下仿真与实测数据的对比　(a) 磁电系数; (b) 磁电功率系数

Figure 5. Comparison of simulation and experimental data under different vibration modes: (a) Magnetoelectric coefficient; (b) magnetoelectric power coefficient.

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图 6 小信号磁场激励下, 自偏置磁电换能器负载电压的线性输出

Figure 6. Linear output of load voltage of the self-biased magnetoelectric transducer under small signal magnetic field excitation.

DownLoad: Full-Size Img PowerPoint

图 7 不同振动模式下的有载磁电功率系数　(a), (c) 弯曲模式; (b), (d) 伸缩模式

Figure 7. Magnetoelectric power coefficient on load under different vibration modes: (a), (c) Bending mode; (b), (d) stretching mode.

DownLoad: Full-Size Img PowerPoint

图 8 外部偏置磁场对磁电系数的影响　(a) 对照组; (b) 实验组

Figure 8. The influence of external biased magnetic field on magnetoelectric coefficient: (a) Control group; (b) experimental group.

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图 9 外部偏置磁场对磁电功率系数的影响　(a) 对照组; (b) 实验组

Figure 9. The influence of external biased magnetic field on magnetoelectric power coefficient: (a) Control group; (b) experimental group.

DownLoad: Full-Size Img PowerPoint

图 10 仿真高磁导率层厚度的影响　(a) 磁电系数; (b) 磁电功率系数

Figure 10. Simulate the effect of high permeability layer thickness: (a) Magnetoelectric coefficient; (b) magnetoelectric power coefficient.

DownLoad: Full-Size Img PowerPoint

表 1 Galfenol和Metglas的材料参数

Table 1. Material parameters of Galfenol and Metglas.

名称	Galfenol	Metglas
密度/(${\text{kg}} \cdot {{\text{m}}^{{{ - 3}}}}$)	7972	7250
杨氏模量/GPa	70	100
泊松比	0.37	0.34
初始磁化率	27	—
饱和磁致伸缩系数/10^–6	320	—
饱和磁化强度/($ {\text{A}} \cdot {{\text{m}}^{{{ - 1}}}} $)	9.0×10⁵	—
电导率/($ {\text{S}} \cdot {{\text{m}}^{{{ - 1}}}} $)	1.23×10⁷	7.69×10⁵

DownLoad: CSV

表 2 不同自偏置磁电换能器的性能指标对比

Table 2. Performance comparison of different self-biased magnetoelectric transducers.

参考文献	体积/mm³	磁电系数/ (V·cm^–1·Oe^–1)	有载磁电功率系数/(μW·Oe^–2)
[4]	1.75	0.1328	14.0
[40]	201.6	28.0	0.323
[41]	121	4.2	—
本文	37.35	10.71	4.62

DownLoad: CSV

[1]	Ou Z Y, Lu C J, Yang A C, Zhou H, Cao Z Q, Zhu R R, Gao H L 2019 Sens. Actuators A: Phys. 290 8 Google Scholar
[2]	Zhao Y X, Lu C J 2015 Rev. Sci. Instrum. 86 036101 Google Scholar
[3]	Chu Z Q, PourhosseiniAsl M, Dong S X 2018 J. Phys. D: Appl. Phys. 51 243001 Google Scholar
[4]	Mukherje D, Mallic D 2023 Appl. Phys. Lett. 122 014102 Google Scholar
[5]	Du Y J, Xu Y W, Wu J G, Qiao J C, Wang Z G, Hu Z Q, Jiang Z D, Liu M 2023 IEEE Trans. Antenn. Propag. 71 2167 Google Scholar
[6]	Niu Y P, Ren H 2021 Appl. Phys. Lett. 118 264104 Google Scholar
[7]	Sudersan S, Arockiarajan A 2019 Compos. Struct. 223 110924 Google Scholar
[8]	周勇, 李纯健, 潘昱融 2018 物理学报 67 077702 Google Scholar Zhou Y, Li C J, Pan Y R 2018 Acta Phys. Sin. 67 077702 Google Scholar
[9]	Han J, Zhang J J, Gao Y W 2018 J. Magn. Magn. Mater. 466 200 Google Scholar
[10]	Yao H, Shi Y, Gao Y W 2016 J. Magn. Magn. Mater. 401 1046 Google Scholar
[11]	阳昌海, 文玉梅, 李平, 卞雷祥 2008 物理学报 57 7292 Google Scholar Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 Google Scholar
[12]	Dong H M, Guo H H, Li J R, Li B J, Gan X X 2023 Phys. Scr. 98 065901 Google Scholar
[13]	Shi Y, Li L, Yang Y 2021 Chin. Phys. B 30 107503 Google Scholar
[14]	Lei B X, You Z X, Zhang Z D, Shi Y 2023 Acta Mech. Sin. 39 523120 Google Scholar
[15]	Niu L F, Shi Y, Gao Y W 2019 AIP Adv. 9 045216 Google Scholar
[16]	Kumar S D, Gupta S, Swain A B, Subramanian V, Padmanabhan M K, Mahajan R L 2021 J. Alloy. Compd. 858 157684 Google Scholar
[17]	Truong B D, Roundy S 2020 Smart Mater. Struct. 29 085053 Google Scholar
[18]	Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knöchel R, Quandt E Meyners D 2012 Nature Mater. 11 523 Google Scholar
[19]	Röbisch V, Yarar E, Urs N O, Teliban I, Knöchel R, Mccoed J, Quandt E, Meyners D 2015 J. Appl. Phys. 117 17B513 Google Scholar
[20]	Zhou Y, Priya S 2014 J. Appl. Phys. 115 104107 Google Scholar
[21]	Zhang J J, Gao Y W 2015 Int. J. Solid. Struct. 69–70 291 Google Scholar
[22]	文玉梅, 王东, 李平, 陈蕾, 吴治峄 2011 物理学报 60 097506 Google Scholar Wen Y M, Wang D, Li P, Cheng L, Wu Z Y 2011 Acta Phys. Sin. 60 097506 Google Scholar
[23]	Lu C J, Li P, Wen Y M, Yang A C, Yang C, Wang D C, He W, Zhang J T 2014 Chin. Phys. B 23 117503 Google Scholar
[24]	Chen L, Li P, Wen Y M, Zhu Y 2015 Compos. Struct. 119 685 Google Scholar
[25]	Lu C J, Li P, Wen Y M, Yang A C, He W, Zhang J T, Yang J, Wen J, Zhu Y, Yu M 2013 Appl. Phys. A 113 413 Google Scholar
[26]	Shi Y, Lei B X, Wang Y K, Ye J J 2022 Compos. Struct. 300 116164 Google Scholar
[27]	Zhang J, Du H, Xia X, Fang C, Weng G J 2020 Mech. Mater. 151 103609 Google Scholar
[28]	Ma J N, Xin C Z, Ma J, Lin Y H, Nan C W 2016 Mater. Res. Express 3 125012 Google Scholar
[29]	Huang D Y, Lu C J, Han B, Wang X, Li C X, Xu C B, Gui J G, Lin C H 2014 Appl. Phys. Lett. 105 263502 Google Scholar
[30]	Yang S C, Cho K H, Park C S, Priya S S 2011 Appl. Phys. Lett. 99 202904 Google Scholar
[31]	Truong B D 2020 IEEE Sens. J. 20 5322 Google Scholar
[32]	Hosur S, Sriramdas R, Karan S K, Liu N, Priya S, Kiani M 2021 IEEE Trans. Biomed. Circuits Syst. 15 1079 Google Scholar
[33]	Saha O, Truong B D, Roundy S 2022 Smart Mater. Struct. 31 113001 Google Scholar
[34]	Kim W, Tuppen C A, Alrashdan F, Singer A, Weirnick R, Robinson J T 2023 J. Appl. Phys. 134 094103 Google Scholar
[35]	Liu X, Zheng X J 2005 Acta Mech. Sin. 21 278 Google Scholar
[36]	李鸣鹤 2023 硕士学位论文 (长春: 吉林大学) Li M H 2023 M. S. Thesis (Changchun: Jilin University
[37]	谢冰鸿, 徐国凯, 肖绍球, 喻忠军, 朱大立 2023 物理学报 72 117501 Google Scholar Xie B H, Xu G K, Xiao S Q, Yu Z J, Zhu D L 2023 Acta Phys. Sin. 72 117501 Google Scholar
[38]	罗志高 2019 大学物理实验 32 9 Google Scholar Luo Z G 2019 Phys. Exp. Coll. 32 9 Google Scholar
[39]	Li L, Chen X M 2008 Appl. Phys. Lett. 92 072903 Google Scholar
[40]	Zhang J T, Li P, Wen Y M, He W, Yang A C, Lu C J 2014 Sens. Actuators A 214 149 Google Scholar
[41]	Annapureddy V, Park S H, Song H, Ryu J 2023 J. Alloy. Compd. 957 170121 Google Scholar

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